Interface Characterization of Current-Perpendicular-to-Plane Spin Valves Based on Spin Gapless Semiconductor Mn2CoAl

Wei, M. S.; Zhou, Chen; Ruan, Xin; Zhou, Qiwen; Fu, Xiaoyi; Liu, Zhenyan; Ma, Qian-Ya; Feng, Yu

doi:10.3390/app8081348

Cited by 3 publications

(2 citation statements)

References 38 publications

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“…In 2018, Meng et al ( Wei et al, 2018 ) investigated the interfacial electronic, magnetic, and spin transport properties of Mn 2 CoAl/Ag/Mn 2 CoAl current-perpendicular-to-plane spin valves. Interestingly, they ( Wei et al, 2018 ) pointed out that the MnCo T -terminated interface enjoys the largest interface spin polarization of 78% and magnetoresistance ratio of 2,886%.…”

Section: Electronic Structures Magnetism and Half-metallicity For [00...mentioning

confidence: 99%

Mini-review of interesting properties in Mn2CoAl bulk and films

Yang

2022

Front. Chem.

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Heusler compounds exhibit many interesting properties, such as high thermopower, magnetocaloric properties, and even topological insulator states. Heusler Mn2CoAl alloy has been experimentally and theoretically proposed as a promising spin-gapless semiconductor with novel electronic, magnetic, spintronic, transport, and topological properties. Furthermore, the spin-gapless semiconducting-like behaviors are also predicted in Mn2CoAl films by measuring the transport and magnetic properties. This mini-review systematically summarizes the interesting properties of Mn2CoAl bulk and Mn2CoAl-based films. This mini-review is hoped to guide further experimental investigations and applications in the particular scientific community.

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Section: Electronic Structures Magnetism and Half-metallicity For [00...mentioning

confidence: 99%

Mini-review of interesting properties in Mn2CoAl bulk and films

Yang

2022

Front. Chem.

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“…In this SI, Wei, Wu, and Feng et al focused on these novel materials. Wei et al [34] studied the interfacial electronic, magnetic, and spin transport properties of Mn 2 CoAl/Ag/Mn 2 CoAl current-perpendicular-to-plane spin valves (CPP-SV) based on density functional theory and non-equilibrium Green's function. Wu et al [35] conducted a comprehensive study of the electronic and magnetic properties of the Ti 2 CoAl/MgO (100) heterojunction with first-principles calculations.…”

Section: Main Content Of the Special Issuementioning

confidence: 99%

Special Issue on “Recent Advances in Novel Materials for Future Spintronics”

2019

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Effect of vacancies on the electronic and magnetic properties of Heusler compound Mn2CoAl

Muthui

2024

AIP Advances

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Investigation of the effect of vacancies occurring within the crystal structure of Heusler compound Mn2CoAl, reveal the emergence of half-metallicity or a metallic electronic structure, depending on the site where the vacancy occurs. The Density Functional Theory (DFT) method, as implemented in the Vienna Ab Initio Simulation package (VASP) has been used. The site specific vacancies reveal that for a Mn vacancy occurring at the tetrahedral site and for a Co vacancy, an increased intersection of states with the Fermi level occurs, with the emergence of half-metallicity and vacancy-induced states in the minority spin channel gap respectively. The resultant spin polarizations are 68% and 37% for the systems with lowest Mn and Co vacancy densities considered in this study and the magnetic moments are 2.00 and 2.03 μB/formula unit respectively. These values are close to the 2 μB/formula unit predicted for Mn2CoAl by the Slater-Pauling rule for half-metallic systems. Simultaneous tetrahedral Mn and Co vacancies induce similar changes in the magnetic moments and density of states but exhibit lower spin polarizations. An octahedral Mn void as well as simultaneous octahedral Mn and Co vacancies result in a metallic electronic structure. In both of these cases, there is a marked deviation from the Slater-Pauling rule for half metals, with magnetic moments of 1.35 and 1.17 μB/formula unit respectively, for the lowest vacancy densities considered in this study. The Mn magnetic moments couple ferrimagnetically and the magnetic order is preserved in all cases, except in the case of the simultaneous Co and Mn vacancies at the octahedral site.

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Interface Characterization of Current-Perpendicular-to-Plane Spin Valves Based on Spin Gapless Semiconductor Mn2CoAl

Cited by 3 publications

References 38 publications

Mini-review of interesting properties in Mn2CoAl bulk and films

Mini-review of interesting properties in Mn2CoAl bulk and films

Special Issue on “Recent Advances in Novel Materials for Future Spintronics”

Effect of vacancies on the electronic and magnetic properties of Heusler compound Mn2CoAl

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