Interface characterization of nanocrystalline CdS/Au junction by current–voltage and capacitance–voltage studies

Abstract

Surface plasmon resonance method for probing interactions in nanostructures: CdS nanoparticles linked to Au and Ag substrates by self-assembled hexanedithiol and aminoethanethiol monolayers

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

“…(˛hv) = A * (hv − E g ) 1/2 (7) where E g is the optical band gap of thin films and A * is a constant having the numerical values of 2 × 10 4 cm −1 (eV) −1/2 whenį s expressed in cm −1 , h and E g are in electron volt (eV). An energy gap of 2.42 eV is obtained by extrapolating the linear part of the (˛h ) 2 vs (h ), as typically shown in the inset of Fig.…”

“…caused by deviation of CdS composition from the stoichiometry. Recently, semiconductor nanostructures have gained considerable importance because of their unusual optical, electrical and device applications [7][8][9][10][11].…”

Titanium nitride: A new Ohmic contact material for n-type CdS

“…5 23,38,39 The smaller barrier height of the as-deposited sample is attributed to the presence of a second phase, possibly CdO, 31 at the Au/CdS interface. This phase forms an insulating layer that accommodates part of the work function difference between CdS and Au.…”

“…The nonideality factor is 2.2 6 0.1, which is in good accordance with values of Schottky diodes made from nanocrystalline CdS films. 39,43,44 The series resistance obtained from the fit is 149 6 18 X, which represents the sum of the bulk CdS resistance and the contact resistance of the TiN/CdS contact. Because the distance between the Au contact and the TiN back contact is only a few hundred nanometers, the magnitude of the bulk resistance is negligible.…”

Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate

“…Thus, efforts have been made to study the properties of the interfaces through the measurements of I -V characteristics in Au-CdS junction by Chavez et al [12] and by Patel et al [14]. Also, electrical studies have been made by Gupta et al [15] for Cu-CdS and Zn-CdS Schottky junctions by determining various junction parameters.…”