Interface Chemistry of Tin Oxide and Glow Discharge Deposited Amorphous Silicon Thin Film Couples

Eser, E.; Ramos, F. Javier

doi:10.1007/978-94-009-3817-5_99

Cited by 1 publication

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The SnO 2 is chemically reduced, leaving a thin but highly absorbing Sn-rich layer [12,13,14]. It has been reported that degradation can be minimized or even eliminated by using low substrate temperatures [14,15], at faster a-Si growth rates [15], or by covering the SnO 2 with a thin protective sputtered ZnO:Al layer [16,17,18].…”

Section: Effect Of H 2 Plasma and C-si Deposition On Sno 2 And Zno/snmentioning

confidence: 99%

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Birkmire¹,

Phillips²,

Shafarman³

et al. 2000

View full text Add to dashboard Cite

SUMMARYThe overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this 12 month NREL subcontract are to advance the state of the art and the acceptance of thin film PV solar cells in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe 2 and its alloys, on a-Si and its alloys, and on CdTe. CuInSe 2 -BASED SOLAR CELLS CIS-based Solar Cells with Improved ManufacturabilityFor solar cells based on thin film Cu(InGa)Se 2 to become a commercially viable technology, manufacturing costs must be reduced. One means to accomplish this is by reducing the substrate temperature at which the Cu(InGa)Se 2 layer is deposited This report addresses material and device issues related to reducing T ss from 550ûC to 400ûC for the deposition of Cu(InGa)Se 2 by physical vapor deposition using multisource elemental evaporation. The CuInGaSe 2 deposition sequence was varied to determine the effect of a Curich growth step, i.e., deposition with the Cu molar flux greater than the sum of the In and Ga fluxes. The connection between grain size, morphology, compositional uniformity, and device performance, as they are affected by substrate temperature and growth process, was investigated. The objective was to develop a process for improved device performance with T ss = 400ûC.Device results with T ss = 400ûC show that a Cu-rich growth step during the Cu(InGa)Se 2 deposition is needed for improved device performance. However, the film and device results are the same whether the Cu-rich growth occurs during the initial nucleation or later in the process. This indicates tolerance to different process sequences, which allows flexibility in deposition process design.Films grown at 550ûC have larger grains and give better performance than films deposited at 400ûC. But, with a given substrate temperature there is no simple correlation between grain size and device performance. At the lower temperature the improved cell results with Cu-rich growth cannot be explained by increased lateral grain size at the surface. Conversely, at the higher temperature, the increased grain size with the Cu-rich growth does not provide improved device performance.At T ss = 550ûC, the device performance is insensitive to the use of Cu-rich growth. A simple process with constant fluxes throughout the deposition gives as high a device efficiency as processes incorporating graded fluxes to give Cu-rich growth. At 400ûC, the uniform process gives more columnar grains but the same lateral grain size as the graded, Cu-rich processes. However, the best devices result from Cu-rich growth although not necessarily during the initial film nucleation.ii In-line Evaporation of Cu(InGa)Se 2In-line evaporation is a potentially effective means to achieve the high rate uniform dep...

show abstract

Section: Effect Of H 2 Plasma and C-si Deposition On Sno 2 And Zno/snmentioning

confidence: 99%

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Birkmire¹,

Phillips²,

Shafarman³

et al. 2000

View full text Add to dashboard Cite

show abstract

Interface Chemistry of Tin Oxide and Glow Discharge Deposited Amorphous Silicon Thin Film Couples

Cited by 1 publication

References 3 publications

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for The Development of Polycrystalline Multijunctions: Annual Report; 24 August 1998-23 August 1999

Contact Info

Product

Resources

About