Interface design and engineering in Al matrix composite with low CTE and high strength reinforced by barium strontium titanate particles

Zhang, Linsen; Chen, Wanxiaonan; Sheng, Jie; Wang, Miao; Lin, Qianru; Ding, Hao; Wang, Lidong; Wu, Yifan; Fei, Weidong

doi:10.1016/j.mtcomm.2022.103512

Cited by 2 publications

(2 citation statements)

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“…It should be noted that studies focused on the determination of CTE are mainly based on X-ray diffraction (XRD) methods. [24][25][26][27][28][29][30][31] This method supposes placing the sample on a solid substrate. The violation of coherence at the film-substrate interface can lead to additional mechanical stresses that complicate the research conduction.…”

Section: Resultsmentioning

confidence: 99%

“…Despite the fact that most works have established an increase in the CTE of nanosized crystallites, some research works have found the opposite effect. [27][28][29][30][31] The theoretical analysis presented in ref. [32] shows that the direction of change in CTE in thin films is determined by the surface relaxation, which is resulted that the coefficient itself can either increase or decrease in nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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Nanostructured Silver Films with a Low Coefficient of Thermal Expansion as a Promising Material for Nanoelectronics

Дукаров

Petrushenko

Sukhov

et al. 2022

Physica Status Solidi (a)

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The results of a study of the thermal expansion of thin silver films obtained by thermal vacuum evaporation are presented. It is shown that, after single heating, the films consist of two types of crystallites. The nanosized fraction, for which the main area of the film is accounted, is represented by crystallites with a size of 50–60 nm. In addition to them, separate grains of hundreds of nanometers in size are observed in the samples, many of which are formed during the condensation process. The coefficient of linear thermal expansion of nanocrystalline films which is only 7 × 10−6 K−1 is determined by electron diffraction using the method of measurement standard. This is significantly lower than the value which is typical for bulk samples. The decrease in the coefficient of thermal expansion is explained by the nanocrystalline nature of the films. The closeness of the obtained value to the coefficient of thermal expansion of silicon and germanium allows us to consider the use of nanocrystalline silver films as an effective way to improve the reliability and efficiency of modern and prospective microelectronics.

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