Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure

Wang, Chuanju; Li, Xiaohang

doi:10.1016/j.apsusc.2023.156954

Cited by 3 publications

(1 citation statement)

References 29 publications

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“…[3][4][5] This indicates the existence of an unintentional metal-semiconductor interfacial layer, leading to a modulation of f S by a vacuum level step ΔE vac due to a dipole of the interfacial layer. 6 On the other hand, in the case of the MIS devices, V th is affected by the insulator-semiconductor conduction band offset w and the fixed charge density σ int of the insulator-semiconductor interface. Various insulators such as oxides Al 2 O 3 , 7 HfO 2 , 8,9 TiO 2 , 10 AlSiO, 11,12 AlTiO, [13][14][15][16][17][18][19] oxynitrides TaON, 20 AlON, 21 and nitrides BN, 22,23 AlN [24][25][26][27][28] have been employed as a gate insulator for GaN-based devices, where V th can be modulated by both w and σ int .…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

Deng,

Gelan,

Uryu

et al. 2024

Journal of Applied Physics

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We have systematically investigated effects of metal–semiconductor or insulator–semiconductor interfacial layers (ILs) in AlGaN/GaN devices, where AlOx, TiOx, or NiOx is employed as an IL. From capacitance–voltage characteristics of metal/IL/AlGaN/GaN devices with a metal–semiconductor IL between the gate metal and AlGaN, it is shown that the IL modulates the threshold voltage Vth, attributed to the vacuum level step induced by the dipole of the IL. We find negative vacuum level steps for AlOx and TiOx ILs, and positive for NiOx, from which the IL dipole density is estimated for each IL material. The two-dimensional electron gas carrier concentration in the metal/IL/AlGaN/GaN devices is also modulated by the vacuum level step. On the other hand, from capacitance–voltage characteristics of metal/Al2O3/IL/AlGaN/GaN devices with an insulator–semiconductor IL between Al2O3 and AlGaN, the fixed charge density of the Al2O3/IL/AlGaN interface is evaluated by the Al2O3 thickness dependence of Vth. For AlOx and TiOx ILs, the fixed charge density is higher than that of the Al2O3/AlGaN interface with no IL, while lower for NiOx. The fixed charge density for an IL shows a positive correlation with the IL dipole density, suggesting that the fixed charge is related to the unbalanced IL dipole. Furthermore, using the conductance method, we find a low trap density of the Al2O3/IL/AlGaN interface for AlOx and NiOx ILs, in comparison with that of the Al2O3/AlGaN interface with no IL.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

Deng,

Gelan,

Uryu

et al. 2024

Journal of Applied Physics

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Numerical Modelling of GaN HEMTS

Sandeep,

Pravin

2024

Springer Tracts in Electrical and Electronics Engineering

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High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

Kumar,

Khandelwal,

Yuvaraja

et al. 2024

Jpn. J. Appl. Phys.

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In this work, we report the reduced gate leakage current by using aluminum oxide (Al2O3) and gallium oxide (Ga2O3) as a bi-layer gate stack for GaN MOS-HEMT on a silicon substrate up to 450°C. The bi-layer gate stack MOS-HEMTs suppressed the gate leakage by more than four orders of magnitude compared to only Al2O3-based GaN MOS-HEMTs at 450°C. The low gate leakage current is attributed to the reduced oxygen vacancies present in Ga2O3 layer, which effectively impede the conduction path of Poole-Frenkel emission at high temperatures, thereby enhancing the overall performance of GaN HEMTs.

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Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure

Cited by 3 publications

References 29 publications

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

Numerical Modelling of GaN HEMTS

High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

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Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure

Cited by 3 publications

References 29 publications

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

AlGaN/GaN devices with metal–semiconductor or insulator–semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge

Numerical Modelling of GaN HEMTS

High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

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High-temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage