2007
DOI: 10.1103/physrevb.76.205436
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Interface dynamics during Cu shadow-mask physical vapor deposition on nonmetallic substrates

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Cited by 1 publication
(2 citation statements)
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“…Film thickness was determined by AFM measurements of films grown by stencil lithography patterning through a hexagonal mask, in parallel with the other C 60 films. The height difference between the masked and the exposed regions has been taken as a measure of the film thickness of the set of samples grown under the same experimental conditions, taking into account that once the film has nucleated, film thickness growth, on average, proceeds independent of the substrate employed [51].…”
Section: Methodsmentioning
confidence: 99%
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“…Film thickness was determined by AFM measurements of films grown by stencil lithography patterning through a hexagonal mask, in parallel with the other C 60 films. The height difference between the masked and the exposed regions has been taken as a measure of the film thickness of the set of samples grown under the same experimental conditions, taking into account that once the film has nucleated, film thickness growth, on average, proceeds independent of the substrate employed [51].…”
Section: Methodsmentioning
confidence: 99%
“…If we take into account that the fullerene films were prepared simultaneously, in single evaporation experiments and with the same experimental setup, on all substrates, such preparation conditions imply that the mass of deposited fullerenes per unit surface area is the same for each sample, except perhaps during the very early stages of nucleation. However, once the steady growth state [51] is assumed to set in, (Fig. 4, h % 30 nm) the C 60 films on Au (Fig.…”
Section: Sts: Electronic Propertiesmentioning
confidence: 99%