Interface effect in pentacene field-effect transistors from high energy proton beam irradiation

Kim, Tae‐Young; Jang, Jingon; Cho, Kyungjune; Song, Young-Jae; Park, Woanseo; Park, Jinsu; Kim, Jae‐Keun; Hong, Woong-Ki; Lee, Takhee

doi:10.1016/j.orgel.2015.09.029

Cited by 7 publications

(5 citation statements)

References 33 publications

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“…It is worth noting that the proton irradiation damage reported in this work, that is, structural damage (hillocks formation) of the organic dielectric, is a completely different effect with respect to what has been studied and reported by Kim et al, where proton irradiation induced trapped charges inside the SiO 2 dielectric layer and at the pentacene/SiO 2 interface. Moreover, the work of Kim et al strengthens our interpretation because also in our work, we show how the organic semiconducting layer (TIPS-pentacene) is not directly damaged by proton irradiation.…”

Section: Introductioncontrasting

confidence: 60%

“…However, a recent study on the effects of high-energy proton irradiation on a pentacene field-effect transistor, fabricated onto a rigid Si/SiO 2 (gate/dielectric) substrate, showed that pentacene itself is not directly degraded by irradiation and attributed the changes in the electrical properties observed in irradiated samples to the proton-beam-induced trapped charges at the pentacene/SiO 2 interface and in the SiO 2 layer. 8 We have recently reported on how flexible devices based on 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), a standard solution-grown material for the fabrication of organic devices (2-terminal and OTFTs) onto flexible plastic substrates, can be used as real-time, direct ionizing radiation detectors, 9 thus opening unprecedented perspectives for space applications of organic electronics. Therefore, a detailed study on the radiation hardness of these devices is mandatory to envisage their exploitation, not only as electronic components but also as ionizing radiation sensors (both as X-ray imagers and as wearable dosimeters) during space missions, where the payload size, weight, low-power supply, and portability are relevant issues.…”

Section: Introductionmentioning

confidence: 99%

“…On the contrary, the channel mobility of pentacene OTFTs was found to decrease after UV and α-particle irradiation, , thus suggesting that also the density of traps energetically located near the valence energy band (i.e., the highest occupied molecular orbital (HOMO) of the organic semiconductor) increased during irradiation. However, a recent study on the effects of high-energy proton irradiation on a pentacene field-effect transistor, fabricated onto a rigid Si/SiO 2 (gate/dielectric) substrate, showed that pentacene itself is not directly degraded by irradiation and attributed the changes in the electrical properties observed in irradiated samples to the proton-beam-induced trapped charges at the pentacene/SiO 2 interface and in the SiO 2 layer …”

Section: Introductionmentioning

confidence: 99%

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Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors

Basiricò

Basile

Cosseddu

et al. 2017

ACS Appl. Mater. Interfaces

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Organic electronic devices fabricated on flexible substrates are promising candidates for applications in environments where flexible, lightweight, and radiation hard materials are required. In this work, device parameters such as threshold voltage, charge mobility, and trap density of 13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic thin-film transistors (OTFTs) have been monitored for performing electrical measurements before and after irradiation by high-energy protons. The observed reduction of charge carrier mobility following irradiation can be only partially ascribed to the increased trap density. Indeed, we used other techniques to identify additional effects induced by proton irradiation in such devices. Atomic force microscopy reveals morphological defects occurring in the organic dielectric layer induced by the impinging protons, which, in turn, induce a strain on the TIPS-pentacene crystallites lying above. The effects of this strain are investigated by density functional theory simulations of two model structures, which describe the TIPS-pentacene crystalline films at equilibrium and under strain. The two different density of states distributions in the valence band have been correlated with the photocurrent spectra acquired before and after proton irradiation. We conclude that the degradation of the dielectric layer and the organic semiconductor sensitivity to strain are the two main phenomena responsible for the reduction of OTFT mobility after proton irradiation.

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Section: Introductioncontrasting

confidence: 60%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors

Basiricò

Basile

Cosseddu

et al. 2017

ACS Appl. Mater. Interfaces

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“…Other work has revealed a degradation of the mobility after irradiation with a dependence on the beam energy, decreasing by 15% for 100 kV and 9% for 15 MV after the same total dose of 400 Gy [101,182]. Conflicting effects on the mobility in pentacene FETs were also observed for proton irradiation [184]. Kim et al observed an increase in the device mobility for 10 12 cm −2 and 10 13 cm −2 proton beams while the opposite was observed for a fluence of 10 14 cm −2 .…”

Section: High Total Radiation Exposure (500 Gy-70 Kgy)mentioning

confidence: 94%

“…However, the poly-crystalline rubrene FET showed high stability up to 1 kGy of electron irradiation, proving the material and device architecture promising for use in low exposure environments. Organic dielectric layers have also been troublesome after proton irradiation (10 13 cm −2 ) of a poly-crystalline TIPSpentacene FETs as suggested by Kim et al [184,185]. An observed degradation of mobility was attributed beyond the mild increase of trap density within the TIPS-pentacene, and to the severe radiation induced structural damage of the organic dielectric which deformed the TIPS-pentacene crystallinity.…”

Section: High Total Radiation Exposure (500 Gy-70 Kgy)mentioning

confidence: 97%

A review of printable, flexible and tissue equivalent materials for ionizing radiation detection

Posar

Petasecca

Griffith

2021

Flex. Print. Electron.

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Advances in flexible and printable electronics have paved the way for large-area, and low-cost wearable electronics that will revolutionize the way we detect and monitor ionizing radiation. The improvements to early detection and widespread use of treatment procedures of tumors and other illnesses using ionizing radiation have led to the rapid increase in the yearly dose exposure to the public. Therefore, safety organizations must introduce stricter quality assurance measures to ensure the safe delivery of the total dose to the patient—only achievable using live monitoring systems, named in-vivo dosimetry. Such systems would also benefit the safety of professional personnel employed in areas that encounter higher exposures of ionizing radiation including nuclear plants, space exploration, flight staff, and research beamline facilities. However, the current real-time detectors employ expensive and rigid high-Z materials including silicon, germanium, and cadmium telluride, that suffer substantial limitations in monitoring the dose deposited in biological tissue and conforming to the complex contours of the human body over large areas. We provide insights into the innovative materials capable of solution-based device fabrication onto flexible substrates with foreseeable avenues towards low-cost large-area printing techniques. This discussion will also review and identify the advantages and existing capabilities of tissue-equivalent materials in the detection of ionizing radiation as the ideal materials for in-vivo dosimetry. Finally, the radiation tolerance of organic materials is outlined to demonstrate that extensive investigations are still required before their utilization as radiation detectors.

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Solution‐Processed Rad‐Hard Amorphous Metal‐Oxide Thin‐Film Transistors

Park

Kwon

et al. 2018

Adv Funct Materials

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The effect of 5 MeV high-energy proton irradiation on solution-processed metal-oxide thin-film transistors (TFTs) is investigated. The electrical characteristics of the devices are measured before and after proton irradiation with radiation doses of 10 13 , 10 14 , and 10 15 cm −2 . TFTs based on zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) exhibit a significant negative shift in their threshold voltage values (ΔV th ≤ −30 V) or transitioned to the conductor state as the proton radiation dose increased. For a-ZnO and IGZO, this change in the electrical characteristics originates from the formation of proton-irradiation-induced oxygen vacancies in the metaloxide semiconductor layer. On the other hand, amorphous zinc tin oxide devices with an optimized composition exhibit relatively stable electrical characteristics when subjected to proton irradiation. Furthermore, the backchannel passivation of oxide-semiconductor TFTs with an n-type organic semiconductor layer significantly improves the device stability under proton irradiation. This study demonstrates that solution-processed metal-oxide semiconductors have significant potential as rad-hard large area electronic devices for nuclear and aerospace applications.

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Interface effect in pentacene field-effect transistors from high energy proton beam irradiation

Cited by 7 publications

References 33 publications

Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors

Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors

A review of printable, flexible and tissue equivalent materials for ionizing radiation detection

Solution‐Processed Rad‐Hard Amorphous Metal‐Oxide Thin‐Film Transistors

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