The intrinsic zinc oxide (ZnO) thin
films with controllable crystallographic
orientation have been synthesized on Si(100) substrates using plasma-enhanced
chemical vapor deposition (PECVD) system without any buffer layer.
Based on X-ray diffraction (XRD) results, the evolution of crystallographic
orientation of ZnO thin films from polar c-plane
(0002), polar c-plane and nonpolar m-plane (101̅0) coexist to nonpolar m-plane
and a-plane (112̅0) coexist was achieved by
a simple factor of controlling synthesized temperature. The plane-view
morphological images exhibited that the surface texture and grain
shape of ZnO thin films could have evolved from hexagonal to stripelike
grains when the ZnO crystallographic orientation changed from perpendicular
to parallel to the substrate. The characterization analysis indicated
that the zinc precursor [diethylzinc (DEZn), Zn(C2H5)2] played a key role on the crystallographic orientation
evolution of ZnO thin films during the early stage of the growth process
because DEZn not only can serve as Zn precursor but also can be employed
as passivating agent to influence the crystal growth under different
synthesized temperatures. Room-temperature Hall effect measurement
showed that intrinsic ZnO thin film with stripelike grains possessed
the lowest value of resistivity ∼7.11 × 102 Ω cm, which had an estimated carrier concentration and mobility
of about 5.73 × 1014 cm–3 and 15.34
cm2/V s, respectively. The water contact angle (CA) measurement
was also provided to determine the surface wettability and surface
free energy of ZnO thin films, indicating that CA could be adjusted
via different crystallographic orientation of ZnO thin film.