2015
DOI: 10.1039/c5ra06235g
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Interface energy barrier tailoring the morphological structure evolution from ZnO nano/micro rod arrays to microcrystalline thin films by Mn doping

Abstract: Hexagonal wurtzite crystal structure of pure and Mn doped ZnO nano/micro rod arrays (N/MRAs) thin films have been grown on ZnO nuclei layers by a cost effective chemical bath deposition (CBD).

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Cited by 13 publications
(3 citation statements)
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“…Hence, a simple way for the fabrication of high-quality polar and nonpolar ZnO thin films on the silicon substrates is urgently necessary. On the other hand, a vast number of studies have recently been in progress to synthesize polar and nonpolar ZnO nanostructures by intentionally introducing surface catalyst or passivating agent. , The above methods also have some problems such as complex synthesis procedures and chemical reactions. In this present work, therefore, we report a simple method that the ZnO thin films with controllable crystallographic orientation for polar and nonpolar planes can be effectively manipulated by employing plasma-enhanced chemical vapor deposition (PECVD) system with a key factor of synthesized temperature directly onto silicon substrates.…”
Section: Introductionmentioning
confidence: 99%
“…Hence, a simple way for the fabrication of high-quality polar and nonpolar ZnO thin films on the silicon substrates is urgently necessary. On the other hand, a vast number of studies have recently been in progress to synthesize polar and nonpolar ZnO nanostructures by intentionally introducing surface catalyst or passivating agent. , The above methods also have some problems such as complex synthesis procedures and chemical reactions. In this present work, therefore, we report a simple method that the ZnO thin films with controllable crystallographic orientation for polar and nonpolar planes can be effectively manipulated by employing plasma-enhanced chemical vapor deposition (PECVD) system with a key factor of synthesized temperature directly onto silicon substrates.…”
Section: Introductionmentioning
confidence: 99%
“…By using double exponential fitting, the average charge transfer lifetime is determined from ‹τ›= (a 1 τ 1 2 + a 2 τ 2 2 )/(a 1 τ 1 + a 2 τ 2 ), where τ 1 is the fast component related to the free exciton states, and τ 2 is the slow component associated with the bound exciton states. 20 The two components, τ 1 and τ 2 , are found to be 6 24 ZnO nanosheets are likely to make better contact with graphene sheets than ZnO nanoparticles. Thus, the photoexcited electrons generated in the conduction band of the nSAHS can be more easily trapped by graphene network and transferred to the interface than the nPAHS.…”
Section: Time-resolved Photoluminescence Decay Profilementioning
confidence: 97%
“…ZnO has been widely used as a promising photoactive semiconductor for converting photon energy due to its wide band gap, high exciton binding energy, high electronic mobility, abundant morphologies, easy synthesis, low cost and non-toxicity. 5,6 In an effort to improve the photoinduced charge transfer in ZnO, several ZnO-based composites have been synthesized. It has been observed that metal-ZnO hybrids create surplus electrons at the interface via Schottky-contact, 7 that metal oxide-ZnO composites improve the photoactive site for co-catalytic activity, 8 and that carbon materials-ZnO hybrids make faster charge separation across the interface.…”
Section: Introductionmentioning
confidence: 99%