2020
DOI: 10.1021/acs.chemrev.9b00532
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Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Abstract: Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today’s microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the … Show more

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Cited by 259 publications
(245 citation statements)
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“…A dvances of miniaturization in electronic devices unveil the possibility of adopting molecular electronics as primary elements in electronic circuity 1 . Plenty of molecules are extensively studied and employed as molecular wires, molecular switches, and molecular transistors 2,3 . Certain special electronic components like potentiometers that can reveal the displacementconductance relationship, and ultimately predict and control molecular conductance by external mechanical force, are of high importance but rarely developed.…”
mentioning
confidence: 99%
“…A dvances of miniaturization in electronic devices unveil the possibility of adopting molecular electronics as primary elements in electronic circuity 1 . Plenty of molecules are extensively studied and employed as molecular wires, molecular switches, and molecular transistors 2,3 . Certain special electronic components like potentiometers that can reveal the displacementconductance relationship, and ultimately predict and control molecular conductance by external mechanical force, are of high importance but rarely developed.…”
mentioning
confidence: 99%
“…The transistors based on pure PDPP-4FTVT and pure P2F films show similar tendency of on/off ratio increase after non-uniform charge injection ( Supplementary Fig. 10), which might be resulted from the trapped charges at the semiconductor/dielectric interface under biases 63 .…”
Section: Modulating the Operation Of Ambipolar Transistors By Non-unimentioning
confidence: 85%
“…To demonstrate the universal applicability of this method for ambipolar transistors, p-type and n-type semiconductors stacked bi-layer ambipolar transistors were studied ( Supplementary Fig. 11), in which holes and electrons accumulate/transport in different layers 20,63 . Whether the transport channel is adjacent to or isolated from the electret layer, the non-uniformly injected charges can significantly reduce the off-state current and improve the on/off ratio.…”
Section: Modulating the Operation Of Ambipolar Transistors By Non-unimentioning
confidence: 99%
“…6a) with a 2 nm-thick layer of calix [8]arene (C [8]A as shown in Fig. 6b) or C-methylcalix[4]-resorcinarene (CM [4]RA as shown in Fig. 6b) resulted in an increase in sensitivity toward ethyl acetate or isopropanol, respectively.…”
Section: Bilayer Filmsmentioning
confidence: 99%
“…The velocity of charge carriers (holes or electrons for p-or n-type organic semiconductors, respectively) in OFETs is quantified by the field effect mobility, which is the most important parameter to characterize the performance of OFETs. OFETs are promising platforms for various types of sensors [1][2][3][4] with a unique combination of advantages. First, the electronic input and output characteristics of OFETs can be modulated by a variety of physical and chemical stimuli through different mechanisms.…”
Section: Introductionmentioning
confidence: 99%