Interface Engineering in Solution‐Processed Nanocrystal Thin Films for Improved Thermoelectric Performance

Ding, D.; Wang, Dawei; Zhao, Man; Lv, Jiawei; Jiang, Hong; Lu, Chenguang; Tang, Zhiyong

doi:10.1002/adma.201603444

Cited by 48 publications

(55 citation statements)

References 31 publications

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“…The thermal-to-electrical energy conversion efficiency of the TEGs is determined by a dimensionless thermoelectric parameter of their n-and p-type constituents, ZT = σS 2 T/κ, where σ, S, κ, and T are electrical conductivity, Seebeck coefficient, thermal conductivity, and absolute temperature, respectively. [13][14][15] CQDs have made tremendous progress as promising thermoelectric building blocks [16][17][18][19][20] due to their solution processability, which allows fabrication of TEGs using cost-effective, low-temperature, and scalable printing techniques. [6,7] This class of materials exhibits attractive thermoelectric features owing to the low dimensionality of the materials: the presence of a controllable density of grain boundaries allows for suppression of thermal conduction, enabling a strategy to increase thermoelectric performance near room temperature (RT).…”

mentioning

confidence: 99%

“…[13][14][15] CQDs have made tremendous progress as promising thermoelectric building blocks [16][17][18][19][20] due to their solution processability, which allows fabrication of TEGs using cost-effective, low-temperature, and scalable printing techniques. [17,28] These film-based thermoelectrics are also compatible with various coating and printing methods, simplifying upscaling and providing ease of device shaping on a broad range of substrates. [16,19,[23][24][25][26][27] However, studies on the thermoelectric properties of these materials have been limited to ingot forms requiring very high temperatures and multistep dicing processes.…”

mentioning

confidence: 99%

“…[21,22] To date, CQD thermoelectrics have been reported with advanced performance approaching that of conventional bulk Bi 2 Te 3 -based systems. While p-type films [17,[28][29][30][31] have seen rapid advancement, the thermoelectric performance of n-type counterparts still lags behind. [16,19,20] Film-based CQD structures offer the potential for micropower applications such as self-powered devices in sensor networks and the internet of things.…”

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confidence: 99%

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Highly Passivated n‐Type Colloidal Quantum Dots for Solution‐Processed Thermoelectric Generators with Large Output Voltage

Nugraha

Kim

Sun

et al. 2019

Advanced Energy Materials

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Thermoelectric generators (TEGs) are devices that directly convert heat into electrical energy. These devices have drawn increased attention for their potential to harvest the dissipated heat from power plants, automotive engines, housing heating systems, and even electronic devices for micropower generation applications. [1][2][3][4][5] TEGs are composed of n-and p-type semiconducting materials connected electrically in series and thermally Colloidal quantum dots (CQDs) are attractive materials for thermoelectric applications due to their simple and low-cost processing; advantageously, they also offer low thermal conductivity and high Seebeck coefficient. To date, the majority of CQD thermoelectric films reported upon have been p-type, while only a few reports are available on n-type films. High-performing n-and p-type films are essential for thermoelectric generators (TEGs) with large output voltage and power. Here, high-thermoelectric-performance n-type CQD films are reported and showcased in high-performance all-CQD TEGs. By engineering the electronic coupling in the films, a thorough removal of insulating ligands is achieved and this is combined with excellent surface trap passivation. This enables a high thermoelectric power factor of 24 µW m −1 K −2 , superior to previously reported n-type lead chalcogenide CQD films operating near room temperature (<1 µW m −1 K −2 ). As a result, an all-CQD film TEG with a large output voltage of 0.25 V and a power density of 0.63 W m −2 at ∆T = 50 K is demonstrated, which represents an over fourfold enhancement to previously reported p-type only CQD TEGs.

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Highly Passivated n‐Type Colloidal Quantum Dots for Solution‐Processed Thermoelectric Generators with Large Output Voltage

Nugraha

Kim

Sun

et al. 2019

Advanced Energy Materials

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“…Therefore, the enhanced S must combine with little changed σ to achieve the S 2 σ promotion. Recently, the PbTe thin films were fabricated by solution‐processed quantum dots . The original organic ligands were stripped with ethylenediamine.…”

Section: Discussion About the Mechanisms Of The Improved S2σmentioning

confidence: 99%

“…When constructing composites made from solution‐processed nanostructures, directly mixing two nanostructures is obviously advantageous for tuning the materials type and composition compared with limited synthesis of core‐shell or composite nanostructures. [8b,28,40]…”

Section: Discussion About the Mechanisms Of The Improved S2σmentioning

confidence: 99%

Bottom Up Chalcogenide Thermoelectric Materials from Solution‐Processed Nanostructures

Ding

Tang

2017

Adv Materials Inter

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where n, e, μ, h, k B , m*, κ l , and L represent the charge carrier density, charge of the electron, mobility of the charge carrier, Plank constant, Boltzmann constant, effective mass of charge carrier near the Fermi level, lattice thermal conductivity, and temperature dependent Lorenz number, respectively. Among them Equation (4) is only valid for metals and degenerate semiconductors described by a parabolic band and the energy-independent scattering approximation. Therefore, it is challenging to decouple the S 2 σ and κ.

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Record High Power Factor and Low Thermal Conductivity in Amorphous/PbTe/Amorphous Multiple Quantum Wells

Ning

Dong

Jian

et al. 2023

Adv Funct Materials

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Quantum well (QW) superlattice is one of the proposals to improve the thermoelectric properties and provide a rich platform for the next generation of thermoelectric device. Previous QW have two main challenges that need to be addressed: i) decrease the electron tunneling across the layers in the semiconductor‐based multiple QWs (MQW), and ii) decrease the thermal conductivity in the oxide‐based MQW. Herein, the study demonstrates amorphous based PbTe/amorphous‐STO MQWs with ultrahigh power factor of 40.9 µW cm−1 K−2 and record low thermal conductivity of ≈0.49 W m−1 K−1 at room temperature. The high performance of PbTe/amorphous‐STO MQWs is attributed to strong quantum confine effect and its intrinsic low thermal conductivity of amorphous superlattice structure. The results open up a new avenue toward modulating thermoelectric properties beyond traditional MQWs of thermoelectric materials.

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Interface Engineering in Solution‐Processed Nanocrystal Thin Films for Improved Thermoelectric Performance

Cited by 48 publications

References 31 publications

Highly Passivated n‐Type Colloidal Quantum Dots for Solution‐Processed Thermoelectric Generators with Large Output Voltage

Highly Passivated n‐Type Colloidal Quantum Dots for Solution‐Processed Thermoelectric Generators with Large Output Voltage

Bottom Up Chalcogenide Thermoelectric Materials from Solution‐Processed Nanostructures

Record High Power Factor and Low Thermal Conductivity in Amorphous/PbTe/Amorphous Multiple Quantum Wells

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