Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode

Prasad, Chowdam Venkata; Park, Joon Hui; Min, Ji Young; Song, Wonjin; Labed, Madani; Jung, Yusup; Kyoung, Sinsu; Kim, Sangmo; Sengouga, Nouredine; Rim, You Seung

doi:10.1016/j.mtphys.2022.100932

Cited by 14 publications

(10 citation statements)

References 71 publications

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“…Developing a highly efficient, sensitive, and reliable X-ray detector for medical imaging and homeland security is still a very challenging task. An excellent overview of the recent advancements in β-Ga 2 O 3 -based X-ray detectors and scintillators has recently been published by Prasad et al [ 58 ]. A comparison of the X-ray detector’s crucial parameters such as X-ray-generated photocurrent, response time, response, sensitivity, and signal-to-noise ratio is presented in detail.…”

Section: β-Ga 2 Omentioning

confidence: 99%

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

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In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

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Section: β-Ga 2 Omentioning

confidence: 99%

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

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“…Similar results were also reported both on current and admittance characteristics due to similar reasons by various researchers recently [24][25][26][27][28][29][30]. In addition, some researchers have been reported the surface states (N ss ) or interface traps (D it ) effects and interfacial layer on the I-V and impedance measurements (C-V and G/ω-V) both in dark and various illumination intensities of the metal/ semiconductor (MS) with and without an interfacial layer, solar cells (CSs), Field Effect Transistors (FETs), and Organic photo-detectors in the literature [31][32][33][34][35][36][37][38]. These surface states and native or deposited an interfacial layer between metal and semiconductor can be caused a large intercept voltage in the C −2 versus V plots As a result, to determine which ratios supply the better performance of MS diode, six different diodes with six different ratios functional interface layer were fabricated onto same p-Si wafer.…”

Section: The Forward/reverse Bias C-v and G/ω-v Characteristicsmentioning

confidence: 99%

Quaternary functional semiconductor devices

Altındal Yerişkin,

Dere,

Orman

et al. 2024

Phys. Scr.

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Al/ZnCdNiTiO2/p-Si diodes with various ratios of active layer were grown onto the p-Si wafer. The functional ZnCdNiTiO2 layer was deposited via sol-gel spin coating method to develop new diodes/structures. Whereas the Ln(I)−V plot shows two linear sections for D1, D2, D3, and D5 structures, D2 and D6 revealed only one linear section in the forward-bias voltages. Therefore, D1, D2, D3, and D5 structures were found to exhibit two-exponential or two-parallel diode behavior in literature. The main electric parameters such as zero-bias barrier height, BH, (Φbo), ideality factor (n), reverse saturation-current (Is, Io)), rectification rate at ±4.5V, series resistance (Rs) and shunt resistance (Rsh) were extracted from the current−voltage (I-V) measurements. The number of surface sates (Nss) and their energy distribution were obtained using forward-bias I-V data by considering the voltage dependence of n and Φbo for each diode. The capacitance / conductance-voltage (C/G−V) plots at 1 MHz were used for extracting some of the other basic electrical parameters. The comparison of all the experimental results suggests that D1 and D3 structures have good performance in terms of lower leakage current, Nss and higher RR and so could be successfully used instead of conventional metal/insulator/semiconductor (MIS) structures.

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“…As an alternative solution to this problem, p-n heterojunctions using n-type β-Ga 2 O 3 and other p-type semiconductors have been explored by several groups. [14,[17][18][19][20][21][22] Among p-type layers, Cu 2 O and NiO are some of the most promising and chemically simple candidates, with breakdown voltages of 1.49 and 1.86 kV reported early on using Cu 2 O/β-Ga 2 O 3 and NiO/β-Ga 2 O 3 p-n heterojunctions, respectively. [14,18] Among these two p-type binary oxide materials, NiO has excellent potential due to its wider bandgap and higher p-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

Sohel,

Kotecha,

Khan

et al. 2023

Physica Status Solidi (a)

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β‐Ga2O3 based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultra‐wide bandgap of close to 5 eV. However, the high‐temperature operation of these ultra‐wide‐bandgap devices is usually limited by the relatively low 1‐2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Here, we report heterojunction p‐NiO/n‐β‐Ga2O3 diodes fabrication and optimization for high‐temperature device applications, demonstrating a current rectification ratio (ION/IOFF) of more than 106 at 410°C. The NiO heterojunction diode can achieve higher turn‐on (VON) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single crystal β‐Ga2O3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p‐n diodes based on β‐Ga2O3 can significantly improve high‐temperature electronic device and sensor performance.This article is protected by copyright. All rights reserved.

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Interface engineering of p-type quaternary metal oxide semiconductor interlayer-embedded β-Ga2O3 Schottky barrier diode

Cited by 14 publications

References 71 publications

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Quaternary functional semiconductor devices

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

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