Interface engineering of underlayer of chemically-amplified EUV photoresists to enhance the photolithographic performance

Wang, Tao; Zhuang, Changchang; Yang, Guo; Xin, Hanshen; Jiang, Lin; Zhang, Jianhua

doi:10.1016/j.mseb.2024.117539

Materials Science and Engineering: B

2024

DOI: 10.1016/j.mseb.2024.117539

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Interface engineering of underlayer of chemically-amplified EUV photoresists to enhance the photolithographic performance

Tao Wang,

Changchang Zhuang,

Guo Yang

et al.

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Cited by 2 publications

References 38 publications

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Anionic Photoacid Generator Bound Polymer Photoresists With Improved Performance for Advanced Lithography Patterning

Zhuang,

Chen,

Wang

et al. 2024

J of Applied Polymer Sci

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Chemically amplified resist (CAR) has gained considerable attention in the realm of extreme ultraviolet lithography (EUVL) due to their exceptional photosensitivity, high resolution, and commercialization. This work presents the development of an anionic photoacid generator (PAG) bound polymer (PGM) photoresist composed of three rationally selected monomeric units: 2‐Phenyl‐2‐propyl methacrylate (PPMA), γ‐butyrolactone‐3‐yl methacrylate (GBLMA), and triphenyl sulfonium salt 1,1,2‐trifluorobutanesulfonate methacrylate (MTFBS‐TPS). Electron beam lithography (EBL) studies demonstrate that the PGM photoresist functions as a positive tone photoresist with commendable sensitivity (27.9 μC/cm2) and contrast (6.53). When compared under similar conditions, with equal amounts of PAG and identical processing, the PGM photoresist exhibited superior pattern fidelity, ease of handling, and higher line resolution (25 nm) relative to the triphenyl sulfonium triflate (TPS‐OTF) blend polymer (PG‐T) photoresist. This enhancement is probably caused by anionic PAG directly attaching to the polymer backbone, which mitigates acid diffusion during the post‐exposure baking (PEB) process. Moreover, the PGM photoresist obtained a pattern of 37.5 nm at 50 mJ/cm2 in the EUVL test. The positive tone resists were successfully applied for the fabrication of nanoscale patterns.

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Anionic Photoacid Generator Bound Polymer Photoresists With Improved Performance for Advanced Lithography Patterning

Zhuang,

Chen,

Wang

et al. 2024

J of Applied Polymer Sci

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Patterning of metal acetylacetonate complex via extreme-ultraviolet light-induced chemical reaction and straightforward thermal development process

Byeon,

Kim,

Kim

et al. 2025

Materials Today Chemistry

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Interface engineering of underlayer of chemically-amplified EUV photoresists to enhance the photolithographic performance

Cited by 2 publications

References 38 publications

Anionic Photoacid Generator Bound Polymer Photoresists With Improved Performance for Advanced Lithography Patterning

Anionic Photoacid Generator Bound Polymer Photoresists With Improved Performance for Advanced Lithography Patterning

Patterning of metal acetylacetonate complex via extreme-ultraviolet light-induced chemical reaction and straightforward thermal development process

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