2020
DOI: 10.1002/sia.6886
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Interface formation of Al2O3 on n‐GaN(0001): Photoelectron spectroscopy studies

Abstract: Al 2 O 3 insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n-type and (0001)-oriented. The substrate surface and the early stages of Al 2 O 3 /n-GaN(0001) interface formation were characterized in situ under ultra-high vacuum conditions by X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s … Show more

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Cited by 13 publications
(8 citation statements)
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References 77 publications
(152 reference statements)
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“…Thin film transistor (TFT) is an important electron device in integrated circuit domain, and its essence is field effect transistor. [1][2][3][4][5] High performance, low power consumption, and small characteristic size are the inevitable trend of integrated circuit development. In order to obtain higher performance and smaller size of TFT, the key is to choose the appropriate channel (semiconductor) material and gate dielectric material.…”
Section: Introductionmentioning
confidence: 99%
“…Thin film transistor (TFT) is an important electron device in integrated circuit domain, and its essence is field effect transistor. [1][2][3][4][5] High performance, low power consumption, and small characteristic size are the inevitable trend of integrated circuit development. In order to obtain higher performance and smaller size of TFT, the key is to choose the appropriate channel (semiconductor) material and gate dielectric material.…”
Section: Introductionmentioning
confidence: 99%
“…Taking into consideration the bandgap energy of the thin films equal to 2.80 eV, the thin film surface exhibits p-type conduction. The electron affinity (χ) of the thin film surface was equal to 2.41 eV and was calculated based on the relationship [ 51 52 ]:…”
Section: Resultsmentioning
confidence: 99%
“…Taking into consideration the bandgap energy of the thin films equal to 2.80 eV, the thin film surface exhibits p-type conduction. The electron affinity (χ) of the thin film surface was equal to 2.41 eV and was calculated based on the relationship [51,52]: (1) where hν = 21.22 eV is the He (I) photon energy, W = 16.01 eV is the width of the spectrum, that is, the energy difference between the VBM and the photoemission cutoff energy, and E g = 2.80 eV is the bandgap energy calculated from the transmission spectrum. The work function (W f ) was determined to be equal to 4.01 eV and was calculated as the difference between the photon energy of the He (I) line and the position of the cutoff energy of the photoemission (17.21 eV).…”
Section: Structure and Elemental Composition Surface Propertiesmentioning
confidence: 99%
“…After 40 s, the fraction of Ga-O bonds keeps around a negligible value, suggesting that the GaON nanolayer has been completely sputtered. The rise of the Ga-Ga bond intensity is because of the preferential sputtering of the light atoms (O and N), leaving a thin layer of metallic Ga on the surface [27,28].…”
Section: A Two-step Formation Of Gaon Nanolayermentioning
confidence: 99%