Interface-induced enhancement of sensitivity in NiFe/Pt/IrMn-based planar hall sensors with nanoTesla resolution

Pişkin, Hasan; Akdoğan, N.

doi:10.1016/j.sna.2019.04.003

Cited by 18 publications

(24 citation statements)

References 23 publications

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“…3, PHE voltage is proportional to the sin2 θ angle between M and I . Therefore, PHE voltage is extremely sensitive rather than AMR voltage to detect small deviations in the magnetization from the current direction [15,16]. Also, the background signals existing in the AMR are not observed in the PHE.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic magnetoresistance and planar Hall effect in magnetoresistive NiFe/Pt thin film

Demirci¹

2020

Turk J Phys

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The magnetoresistive NiFe/Pt sensor was fabricated by using standard microlithography and sputter deposition techniques and then the magnetic and magnetotransport properties were investigated. The magnetic properties of the sample show that the easy axis of magnetization prefers a predefined direction along the Hall bar. Moreover, the sample has uniaxial magnetic anisotropy due to the growth-induced magnetic anisotropy. On the other hand, the Anisotropic magnetoresistance (AMR) and the Planar Hall effect (PHE) of the sample were investigated in detail between 0°and 360°. The angle-dependent AMR and PHE signals at the in-plane magnetic field of constant magnitude intersect at certain angles. At these angles, the presence of unusual peaks and valleys was observed. This is proof that AMR and PHE curves had strongly affected each other at certain angles.

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Section: Introductionmentioning

confidence: 99%

Anisotropic magnetoresistance and planar Hall effect in magnetoresistive NiFe/Pt thin film

Demirci¹

2020

Turk J Phys

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“…Magnetometers based on the Hall effect [160] are suitable for the detection of labelled molecules or proteins in point-of-care [161,162] devices due to the low energy costs, ease of use and a detection level limit of the order of 10 nT/ √ Hz [163][164][165]. There are several different geometries of magnetic field sensors based on the Hall effect [166][167][168][169].…”

Section: Hall Effect Magnetometersmentioning

confidence: 99%

Ultrasensitive Magnetic Field Sensors for Biomedical Applications

Murzin

Mapps

Levada

et al. 2020

Sensors

169

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The development of magnetic field sensors for biomedical applications primarily focuses on equivalent magnetic noise reduction or overall design improvement in order to make them smaller and cheaper while keeping the required values of a limit of detection. One of the cutting-edge topics today is the use of magnetic field sensors for applications such as magnetocardiography, magnetotomography, magnetomyography, magnetoneurography, or their application in point-of-care devices. This introductory review focuses on modern magnetic field sensors suitable for biomedicine applications from a physical point of view and provides an overview of recent studies in this field. Types of magnetic field sensors include direct current superconducting quantum interference devices, search coil, fluxgate, magnetoelectric, giant magneto-impedance, anisotropic/giant/tunneling magnetoresistance, optically pumped, cavity optomechanical, Hall effect, magnetoelastic, spin wave interferometry, and those based on the behavior of nitrogen-vacancy centers in the atomic lattice of diamond.

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“…Such behavior is caused mainly by the interferences between the layers, as the optical properties of thin Cr layers (below 20 nm) are found to be typical of dielectric materials. This could be of interest for the development of optical microscopy [23] and sensing [24,25].…”

Section: Introductionmentioning

confidence: 99%

Controlling the Transverse Magneto-Optical Kerr Effect in Cr/NiFe Bilayer Thin Films by Changing the Thicknesses of the Cr Layer

et al. 2020

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Here, we demonstrate the impact of ferromagnetic layer coating on controlling the magneto-optical response. We found that the transverse magneto-optical Kerr effect (TMOKE) signal and TMOKE hysteresis loops of Ni80Fe20 thin layers coated with a Cr layer show a strong dependence on the thickness of the Cr layer and the incidence angle of the light. The transmission and reflection spectra were measured over a range of incidence angles and with different wavelengths so as to determine the layers’ optical parameters and to explain the TMOKE behavior. The generalized magneto-optical and ellipsometry (GMOE) model based on modified Abeles characteristic matrices was used to examine the agreement between the experimental and theoretical results. A comprehensive theoretical and experimental analysis reveals the possibility to create a TMOKE suppression/enhancement coating at specific controllable incidence angles. This has potential for applications in optical microscopy and sensors.

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Interface-induced enhancement of sensitivity in NiFe/Pt/IrMn-based planar hall sensors with nanoTesla resolution

Cited by 18 publications

References 23 publications

Anisotropic magnetoresistance and planar Hall effect in magnetoresistive NiFe/Pt thin film

Anisotropic magnetoresistance and planar Hall effect in magnetoresistive NiFe/Pt thin film

Ultrasensitive Magnetic Field Sensors for Biomedical Applications

Controlling the Transverse Magneto-Optical Kerr Effect in Cr/NiFe Bilayer Thin Films by Changing the Thicknesses of the Cr Layer

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