Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO
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Wang, Qingyan; Li, Zhi; Zhang, Wenhao; Zhang, Zuocheng; Zhang, Jinsong; Li, Wei; Ding, Hao; Ou, Yunbo; Deng, Peng; Chang, Kai; Wen, Jing; Song, Can-Li; He, Ke; Jia, Jin‐Feng; Ji, Shuai‐Hua; Wang, Yayu; Wang, Lili; Chen, Xi; Ma, Xu-Cun; Xue, Qi‐Kun

doi:10.1088/0256-307x/29/3/037402

Cited by 1,167 publications

(949 citation statements)

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“…In copper-oxide based heterostructures, where none of the constituents exhibit superconductivity, HTSC was demonstrated to develop in a single atomic CuO 2 plane [7]. Evidence for high T c superconductivity has also been reported for FeSe atomically thin films prepared on SrTiO 3 [8]. Using the electrical double layer transistor (EDLT) technique, which allows one to achieve very large changes in carrier density, it is possible to induce superconductivity at the surface of insulating crystals [9] and to dramatically tune the value of the superconducting T c at the surface of known superconductors [10].…”

Section: Introductionmentioning

confidence: 93%

Interface superconductivity

Gariglio

Gabay

Mannhart

et al. 2015

Physica C: Superconductivity and its Applications

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Low dimensional superconducting systems have been the subject of numerous studies for many years. In this article, we focus our attention on interfacial superconductivity, a field that has been boosted by the discovery of superconductivity at the interface between the two band insulators LaAlO 3 and SrTiO 3 .We explore the properties of this amazing system that allows the electric field control and on/off switching of superconductivity. We discuss the similarities and differences between bulk doped SrTiO 3 and the interface system and the possible role of the interfacially induced Rashba type spin-orbit. We also, more briefly, discuss interface superconductivity in cuprates, in electrical double layer transistor field effect experiments, and the recent observation of a high T c in a monolayer of FeSe deposited on SrTiO 3 .

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Section: Introductionmentioning

confidence: 93%

Interface superconductivity

Gariglio

Gabay

Mannhart

et al. 2015

Physica C: Superconductivity and its Applications

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“…where R s is the sheet resistivity of the 2D film and r i is the position of the ith probe with the relation of r 4 >r 3 >r 2 >r 1 . In case that the probe spacing is identical, i.e., r 4 -r 3 =r 3 -r 2 =r 2 -r 1 , the measured resistance can be simplified to be…”

Section: Difference Between C1423 and C1234 Measurement Configurationsmentioning

confidence: 99%

“…Single-layer films of FeSe were grown on Nb-doped SrTiO 3 (001) surface by the same method as reported previously 1 , employing extra Se flux in an MBE system equipped with STM/STS and 4PP capabilities. The growth process was monitored by reflection high-energy electron diffraction (RHEED) (Fig.…”

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confidence: 99%

Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3

Liu

Liu³

et al. 2014

Nature Mater

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Search for superconductors with a T c above the liquid nitrogen temperature (77 K) led to the discovery of a high-T c cuprate with a T c above 130 K over two decades ago 16 . Even though the value of T c is only 26 K in the first Fe-based superconductor, LaFeAsO (ref. 17) with the earlier work on superconducting oxides interfaces [3][4][5][6] , demonstrates that interface between two different materials provide not only a rich system for studying two-dimensional (2D) superconductivity, but also a potential pathway to high-T c superconductivity [7][8][9][10][11][12] .Indeed, recent angle-resolved photoemission spectroscopy (ARPES) experiments on the FeSe/STO system revealed different electronic structure from those of bulk FeSe and possible occurrence of superconductivity around 65 K (refs. 13,14). An ex situ transport measurements performed on FeSe/STO protected by multiple layers of FeTe and amorphous Si overlay revealed a zero-resistance T c of 23.5 K and an onset T c > 40 K (ref. 15). Evidently the addition of protection layers suppresses superconductivity in single-layer FeSe. In this work, we report electrical transport measurements on single-layer films of FeSe grown on Nb-doped SrTiO 3 substrate using an in situ 4-point probe (4PP) technique. We found that superconductivity could be obtained even at a temperature as high as 109 K.Single-layer films of FeSe were grown on Nb-doped SrTiO 3 (001) surface by the same method as reported previously 1 , employing extra Se flux in an MBE system equipped with STM/STS and 4PP capabilities. The growth process was monitored by reflection high-energy electron diffraction (RHEED) (Fig. 1a), which allows the precise control of film growth needed to achieve one unit-cell thickness as exactly as possible. The crystal nature of the films was confirmed by STM imaging at both large and atomic scales, as shown in Figs grown on a conducting substrate, it does mean zero resistance of the film as the film shorts the conducting substrate. However, when the 4PP detects a finite voltage, it may not necessarily mean that the sample is not superconducting. Indeed, the 4PP technique is a powerful tool for investigating superconductivity in films that cannot be taken out of a UHV system or an interface that is not accessible by surface probes.Two typical I-V curves collected at 3 K in C1423 and C1234 are shown in Figs. 2b and 2c, respectively. The data demonstrate explicitly that the film is superconducting, with the critical current (I c ) defined by the current value for which the superconducting top layer can no longer short the conducting substrate with a finite resistance. Even though interpretation of the finite voltage in the superconducting I-V curves are complicated, the essentially zero voltage seen at low currents cannot be resulted from artificial effects of the contact, since all four tips of the 4PP have Ohmic contacts with the sample individually (Supplementary Information). It is also interesting to note that the extracted I c have similar values for both measurement con...

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“…Recently, FeSe is also attracting considerable attention due to the discovery of high-temperature superconductivity in single-layer films on SrTiO 3 substrate [15]. The reported superconducting [16][17][18][19] which is significantly higher than T c of ~8 K for bulk FeSe [20].…”

Section: Introductionmentioning

confidence: 99%

“…The reported superconducting [16][17][18][19] which is significantly higher than T c of ~8 K for bulk FeSe [20]. The importance of interfacial effects, such as the electron-phonon coupling across the interface between FeSe and SrTiO 3 , has been proposed as the origin of the observed drastic T c enhancement [15,21,22]. In addition to the interfacial effects, the electron doping from SrTiO 3 is essential for high-temperature superconductivity [16,17].…”

Section: Introductionmentioning

confidence: 99%

Temperature insensitivity of Fermi surface in electron-doped high-temperature FeSe films on SrTiO₃

Shigekawa

Nakayama²,

Phan

et al. 2018

J. Phys.: Conf. Ser.

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Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO ₃

Cited by 1,167 publications

References 23 publications

Interface superconductivity

Interface superconductivity

Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3

Temperature insensitivity of Fermi surface in electron-doped high-temperature FeSe films on SrTiO₃

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Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO 3

Cited by 1,167 publications

References 23 publications

Interface superconductivity

Interface superconductivity

Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3

Temperature insensitivity of Fermi surface in electron-doped high-temperature FeSe films on SrTiO3

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Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO ₃

Temperature insensitivity of Fermi surface in electron-doped high-temperature FeSe films on SrTiO₃