2020
DOI: 10.1039/c9mh01517e
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Interface limited hole extraction from methylammonium lead iodide films

Abstract: A new method is proposed to determine charge diffusion coefficient and transfer velocity to extraction layers. Hole diffusion coefficient in MAPbI3 is constant between 1016 – 1017 cm−3, a hallmark of band transport but overall extraction is interface limited.

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Cited by 11 publications
(17 citation statements)
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“…Note that the longer decay lifetimes of the perovskite film on BTORA than those of the perovskite film on BTRA suggests the slower hole extraction at the BTROA/perovskite interface,w hich might be ascribed to the larger energy level offset between the HOMO level of BTORA (À4.80 vs. À5.02 eV for BTRA) and the conduction band of perovskite film (À5.4 eV). [16] Clearly,the shortest PL lifetime and highest quenching efficiency of the perovskite emission suggest the strongest hole extraction capability of the BTORCNAHTM, which should be benefitted from its highest hole mobility.…”
Section: Angewandte Chemiementioning
confidence: 98%
“…Note that the longer decay lifetimes of the perovskite film on BTORA than those of the perovskite film on BTRA suggests the slower hole extraction at the BTROA/perovskite interface,w hich might be ascribed to the larger energy level offset between the HOMO level of BTORA (À4.80 vs. À5.02 eV for BTRA) and the conduction band of perovskite film (À5.4 eV). [16] Clearly,the shortest PL lifetime and highest quenching efficiency of the perovskite emission suggest the strongest hole extraction capability of the BTORCNAHTM, which should be benefitted from its highest hole mobility.…”
Section: Angewandte Chemiementioning
confidence: 98%
“…122 For these reasons, the interface is not considered a limiting factor in the hole extraction when compared to PEDOT. 123 However, the NiO interface can have a large number of defects. Defect engineering has been widely applied to improve the performance of NiO based devices, either by tuning the concentration of Ni 3+ or by inducing the formation of additional NiOOH.…”
Section: Charge Dynamics At the Nio/perovskite Interfacementioning
confidence: 99%
“…5,[39][40][41][42] Steady-state photoluminescence (PL) and time-resolved photoluminescence (TRPL) studies of perovskite films with and without CTLs have been used to measure electron and hole extraction kinetics. 7,[43][44][45] This surface-quenching TRPL approach has recently been shown to be applicable to probing charge carrier mobilities 43,46 under conditions where the perovskite active layer is thicker than the optical absorption depth of the excitation light. To date this approach has not been employed to compare electron and hole mobilities or the impact of perovskite film thickness and morphology.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, charge transfer dynamics will be more pronounced if the charges are generated adjacent to the CTL/perovskite interface, whereas charge transport will be more dominant when charges are generated at the opposite side. 11,43 By employing either hole or electron transport layers, this approach can thus be used to determine both electron and hole transport kinetics within the perovskite layer.…”
Section: Introductionmentioning
confidence: 99%