Intramolecular noncovalent interactions (INIs) have served as ap owerfuls trategy for accessing organic semiconductors with enhanced charge transport properties.Herein, we apply the INI strategy for developing dopant-free holetransporting materials (HTMs) by constructing two smallmolecular HTMs featuring an INI-integrated backbone for high-performance perovskite solar cells (PVSCs). Upon incorporating noncovalent S•••O interaction into their simplestructured backbones,t he resulting HTMs,B TORA and BTORCNA, showed self-planarized backbones,t uned energy levels,enhanced thermal properties,appropriate film morphology,a nd effective defect passivation. More importantly,t he high film crystallinity enables the materials with substantial hole mobilities,t hus rendering them as promising dopant-free HTMs.C onsequently,t he BTORCNA-based inverted PVSCs delivered ap ower conversion efficiency of 21.10 %w ith encouraging long-term device stability,o utperforming the devices based on BTRA without S•••O interaction (18.40 %). This work offers ap ractical approach to designing charge transporting layers with high intrinsic mobilities for highperformance PVSCs.