Interface Magnetic Anisotropy of Pd/Co&lt;sub&gt;2&lt;/sub&gt;Fe&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;Mn&lt;sub&gt;1−&lt;i&gt;x&lt;/i&gt;&lt;/sub&gt;Si/MgO Layered Structures

Kubota, Takahide; Kamada, Tomonari; Kim, Jihun; Tsukamoto, Arata; Takahashi, Shigeki; Sonobe, Y.; Takanashi, Kōki

doi:10.2320/matertrans.me201505

Cited by 12 publications

(5 citation statements)

References 29 publications

(31 reference statements)

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“…Similarly, the interfacial anisotropy of 1.02 ± 0.08 erg/cm 2 is obtained for the CFS( d )/MgO(2) heterostructures directly deposited onto 10 nm Ta buffer. The interfacial anisotropy K S we derived is comparable to that of 1.2 erg/cm 2 reported in other group [40]. Additionally, the volume anisotropy K V are derived from the slopes of the linear extrapolation to be −1.7 × 10 6 erg/cm 3 and −2.1 × 10 6 erg/cm 3 , respectively, for the heterostructures buffered with Pd and Ta.…”

Section: Resultssupporting

confidence: 87%

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co₂FeSi/MgO heterostructures

Wang

Tang

Xiao

et al. 2020

Surface Engineering

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A series of Co 2 FeSi (CFS)/MgO heterostructures with Pd and Ta buffers are fabricated by sputtering method. Perpendicular magnetic anisotropy (PMA) with energy density of ∼1 × 10 6 erg/cm 3 is demonstrated in the annealed heterostructures deposited onto two heavy metal buffers. Pronounced influence of buffer layers on the magnetic and interfacial PMA properties is observed. Thicker magnetic dead layer and lower saturation magnetization are found in annealed Ta-buffered CFS/MgO heterostructure in contrast to Pd-buffered one. Wide window of MgO thickness exhibiting PMA is witnessed in the Pd-buffered heterostructure, in line with the enhanced PMA. PMA is shown to be insensitive to buffer thickness and is identified to dominantly originate from the heterostructure interface. Our results provide some useful information for design and integration of next-generation perpendicular spintronic devices based on CFS/MgO heterostructures.

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Section: Resultssupporting

confidence: 87%

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co₂FeSi/MgO heterostructures

Wang

Tang

Xiao

et al. 2020

Surface Engineering

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“…Multilayers, consisting of Cr (80)/Pd (5)/Co 2 Fe 0.4 Mn 0.6 Si (5 or 30)/MgO (2)/Co 0.5 Fe 0.5 (5)/IrMn 3 (10)/Ru (7) (thickness in nm), were grown on MgO(001) substrates at room temperature using an ultrahigh vacuum (UHV) sputtering system (ULVAC, MPS series) 8 . After the deposition of the CFMS layer, the entire stack was annealed at 400 °C for 20 minutes in the UHV system to crystallise the CFMS Heusler alloy layer into the perfectly-ordered L 2 1 phase.…”

Section: Methodsmentioning

confidence: 99%

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Jackson

Sun

Kubota

et al. 2018

Sci Rep

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Current information technology relies on the advancement of nanofabrication techniques. For instance, the latest computer memories and hard disk drive read heads are designed with a 12 nm node and 20 nm wide architectures, respectively. With matured nanofabrication processes, a yield of such nanoelectronic devices is typically up to about 90%. To date the yield has been compensated with redundant hardware and software error corrections. In the latest memories, approximately 5% redundancy and parity bits for error corrections are used, which increase the total production cost of the devices. This means the yield directly affects the device costs. It is hence critical to increase the yield in nanofabrication. In this paper, we have applied our recently developed method to image buried interfaces in combination with chemical analysis to evaluate magnetic tunnel junctions and have revealed their different magnetoresistance ratios caused by the presence of materials formed at the junction edges. The formation of these materials can be avoided by optimising the junction patterning process to remove residual carbon introduced from resist. Our imaging method with chemical analysis have demonstrated a significant potential for the improvement of junction performance, resulting in higher yields. This can be used as a quality assurance tool in a nanoelectronic device production line.

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“…10) The hybridization between 3d electron orbitals of Co and 5d(4d) orbitals of Pt(Pd) at the FM/HM interfaces and spin-orbit coupling (SOC), induced by symmetry breaking, are responsible for the strong interfacial magnetic anisotropy, which mainly contributes to PMA of [Co/Pt] n and [Co/Pd] n MLs. 7,[11][12][13] The strong PMA makes these MLs suitable for high density data storage, while the essential SOC in the 5d (Pt, Ta, W, Hf ) and 4d (Pd) HM enables a field-free magnetization switching of the FM layer (Co, 3,14) NiCo, 2) CoFe(B) 1,13) ), which underlies new magnetic recording technologies. [1][2][3][13][14][15][16][17] In such FM/HM bilayers, a spin accumulation at the interface via the mechanisms known as spin Hall effect (SHE) and Rashba-Edelstetin effect can exert a torque on the magnetic moments of the FM layer leading to their precession or even complete reversal.…”

Section: Introductionmentioning

confidence: 99%

Fundamentally Different Magnetoresistance Mechanisms in Related Co/Pd and Co/Pt Multilayers for Spintronic Applications

Wu,

Kasiuk,

Przewoźnik

et al. 2023

Mater. Trans.

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In this research, we have analyzed the electrical resistance of Co/Pd and Co/Pt thin multilayered films with perpendicular magnetic anisotropy (PMA) deposited by magnetron sputtering to determine and compare their magnetoresistance (MR) mechanisms. The studies were carried out depending on the magnitude and direction of the applied magnetic field in a wide temperature range T = 3-300 K. It is shown that both the isotropic and angle-dependent MR mechanisms are different for these two films studied. Magnon and anisotropic MR mechanisms (MMR and AMR) are found to be characteristic of the Co/Pd film, while Lorentz and spin Hall MR mechanisms (LMR and SMR) determine the magnetotransport in the Co/Pt film. The revealed differences in the MR mechanisms are discussed in terms of the quality of interfaces and properties of 5d (4d) metals.

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Interface Magnetic Anisotropy of Pd/Co<sub>2</sub>Fe<i><sub>x</sub></i>Mn<sub>1−<i>x</i></sub>Si/MgO Layered Structures

Cited by 12 publications

References 29 publications

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co₂FeSi/MgO heterostructures

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co₂FeSi/MgO heterostructures

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Fundamentally Different Magnetoresistance Mechanisms in Related Co/Pd and Co/Pt Multilayers for Spintronic Applications

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Interface Magnetic Anisotropy of Pd/Co<sub>2</sub>Fe<i><sub>x</sub></i>Mn<sub>1−<i>x</i></sub>Si/MgO Layered Structures

Cited by 12 publications

References 29 publications

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co2FeSi/MgO heterostructures

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co2FeSi/MgO heterostructures

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Fundamentally Different Magnetoresistance Mechanisms in Related Co/Pd and Co/Pt Multilayers for Spintronic Applications

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Product

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Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co₂FeSi/MgO heterostructures

Effects of Pd- and Ta-buffer layer on magnetic and interfacial perpendicular properties of sputtered Co₂FeSi/MgO heterostructures