Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

Coluzza, C.; Tuncel, E.; Staehli, J. L.; Baudat, P. A.; Margaritondo, G.; McKinley, J. T.; Ueda, Akira; Barnes, A.V.; Albridge, R. G.; Tolk, N. H.; Martin, D.; Morier‐Genoud, F.; Dupuy, Charles; Rudra, A.; Ilegems, M.

doi:10.1103/physrevb.46.12834

Cited by 52 publications

(42 citation statements)

References 22 publications

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“…Early experiments were limited to pumping from the top of the valence band in one material to the bottom of the conduction band in the other. With the development of highpower widely tunable infrared free-electron laser sources, it has become possible to directly pump a heterojunction interface across its conduction band discontinuity [88]. The free-electron laser-based internal photoemission technique was applied, e.g., to investigate the conduction band discontinuity of a CdS/CdTe interface [89].…”

Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

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Laser applications in thin-film photovoltaics

et al. 2010

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We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se 2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties of thin films. Unlike traditional panels based on crystalline silicon wafers, the individual cells of a thin-film photovoltaic module can be serially interconnected by laser scribing during fabrication. Laser scribing applications are described in detail, while other laserbased fabrication processes, such as laser-induced crystallization and pulsed laser deposition, are briefly reviewed. Lasers are also integrated into various diagnostic tools to analyze the composition of chemical vapors during deposition of Si thin films. Silane (SiH 4 ), silane radicals (SiH 3 , SiH 2 , SiH, Si), and Si nanoparticles have all been monitored inside chemical vapor deposition systems. Finally, we review various thin-film characterization methods, in which lasers are implemented.

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Section: Laser-based Characterization Methods For Tf Photovoltaicsmentioning

confidence: 99%

“…Light-beam-induced current Photocurrent Homogeneity [67,86,87] Internal photoemission Photocurrent Conduction band discontinuity [88,89] Photoreflectance spectroscopy Reflectance Bandgap energies [90] promote crystallite formation, which in turn rapidly leads to the growth of coarser particles.…”

Section: Laser-induced Particle Explosive Evaporationmentioning

confidence: 99%

Laser applications in thin-film photovoltaics

et al. 2010

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“…Recent instrumentation advances--and in particular the use of a tunable free electron laser (FEL) as the IR source--removed most of these difficulties [10,[14][15][16][17][18][19][20][21]. We present here successful IR spectroscopic SNOM experiments on different systems in materials science and the first tests in the life sciences.…”

Section: Introductionmentioning

confidence: 99%

Infrared near-field microscopy with the Vanderbilt free electron laser: overview and perspectives

Vobornik

Margaritondo

Sanghera

et al. 2004

Infrared Physics & Technology

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Scanning near-field optical microscopy (SNOM) makes it routinely possible to overcome the fundamental diffraction limit of standard (far-field) microscopy. Recently, aperture-based infrared SNOM performed in the spectroscopic mode, using the Vanderbilt University free electron laser, started delivering spatially-resolved information on the distribution of chemical species and on other laterally-fluctuating properties. The practical examples presented here show the great potential of this new technique both in materials science and in life sciences.

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“…And this is but one example of the many potential applications of the FEL for condensed matter research. The Vanderbilt FEL has also been used by Coluzza et al and McKinley et al [18] as a pump to excite carriers over energy barriers at biased semiconductor interfaces. From the corresponding photocurrent thresholds, it is very straightforward to derive the energy barrier heights [18].…”

Section: Conclusion and Future Evolutionmentioning

confidence: 99%

Ultrabright Synchrotron Radiation Opens up New Research Frontiers

Margaritondo

1994

Acta Phys. Pol. A

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We present an update on recent events concerning ultrabright synchrotron radiation. First and foremost, a new generation of sources has been put in operation in the past few months. Second, microscopy and spectromicroscopy -arguably the techniques that will mostly profit from ultrahigh brightness -have produced interesting results demonstrating that they are absolutely needed for a realistic picture of solid surfaces and interfaces, as well as for biological applications. Third, ultrahigh-resolution photoemission has broken new ground in the study of collective phenomena, notably the properties of the superconducting gap. Finally, we will comment on the recent use of another class of sources for practical research: infrared free electron lasers.PACS numbers: 79.60.-i, 07.85.+n A rapid evolutionThe last time I had the honor to lecture at the International School of Synchrotron Radiation in Jaszowiec, I argued that we were on the threshold of a real revolution in synchrotron science. A new generation -the third -of synchrotron sources was in the final stages of construction. And many groups were already involved in the preliminary versions of the techniques that will probably explode with the new sources, notably spectroscopy with high lateral resolution -the socalled spectromicroscopy [1].I am now happy to report that the expected revolution is happening: I present an update on the new sources and the new classes of experiments.In the course of 1993, three soft-X-ray sources of the third generation have been put in operation (in addition to the hard-X-ray source ESRF in Grenoble): ALS -Berkeley, ELETTRA -Trieste and SRRC -Taiwan. Furthermore, we have seen the steady user operation of the free electron lasers (FEL's) at Vanderbilt University and at the University of California-Santa Barbara, and the progress towards a similar status of the FEL's facilities of FOM in Holland and of LURE in France.All of these events are symbolized by Fig. 1, which shows the very first experimental results produced by ELETTRA in Trieste [2]. The bottom part of the (705)

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Interface measurements of heterojunction band lineups with the Vanderbilt free-electron laser

Cited by 52 publications

References 22 publications

Laser applications in thin-film photovoltaics

Laser applications in thin-film photovoltaics

Infrared near-field microscopy with the Vanderbilt free electron laser: overview and perspectives

Ultrabright Synchrotron Radiation Opens up New Research Frontiers

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