Interface modification of MoS2/SiO2 leading to conversion of conduction type of MoS2

The effect of Al2O3 electrical shielding on MoS2 energy structure modulation in MoS2/p-Si heterojunction solar cells

“…, the increasing electron density and then the rising Fermi level in the energy space, 27,35,36 which is consistent with what was reported on the n-type doping of MoS 2 . 27,36,37 Except for the peak position variation, the integrated intensities of both E 1 2g and A 1g peaks obviously increase when the Al 2 O 3 thickness is less than 2 nm, likely relative to the improved crystallinity in MoS 2 samples by the Al 2 O 3 passivation effect. 30,35…”

“…28,33,34 The A 1g vibrations are more susceptible to the electron concentrations than the E 1 2g modes, and the red shift of the A 1g vibrations in Raman spectrums results from the electron injection effect. 35,36 These spectroscopic observations demonstrate the change of doping level in MoS 2 , i.e. , the increasing electron density and then the rising Fermi level in the energy space, 27,35,36 which is consistent with what was reported on the n-type doping of MoS 2 .…”

Phase and Composition Tunable Out-of-Plane Seebeck Coefficients for MoS2-Based Films

“…Figure c,d confirms SP and MP MoS 2 thin films S ⊥ ≈ 140 and 294 μV K –1 , respectively, at 300 K (Figure e). Positive S ⊥ for SP and MP MoS 2 indicates that large-area SP and MP MoS 2 have p-type conduction, consistent with previous studies. ,, Contributions from Cu layers were removed by S ⊥ for the Cu/Cu/SiO 2 /Si substrate to obtain SP and MP MoS 2 only S ⊥ = 2.9 μV K –1 at room temperature, consistent with bulk Cu, S = 1.9–6.5 μV K –1 . − …”

“…Positive S ⊥ for SP and MP MoS 2 indicates that large-area SP and MP MoS 2 have p-type conduction, consistent with previous studies. 17,41,42 Contributions from Cu layers were removed by S ⊥ for the Cu/Cu/SiO 2 /Si substrate to obtain SP and MP MoS 2 only S ⊥ = 2.9 μV K −1 at room temperature, consistent with bulk Cu, S = 1.9−6.5 μV K −1 . 43−46 As shown in Figure 2b, the MP MoS 2 thin film was serially connected by the 3 nm MoS 2 and 24 nm S-doped MoO 3−x layers along the out-of-plane direction.…”

All-Optical Reconfigurable Excitonic Charge States in Monolayer MoS2

“…It was reported that O-dangling bonds formed on the interface between SiO 2 and MoS 2 lead to the n-doping of SiO 2 . 36,37 As shown in Figure 2c, the O-dangling bonds cause electron depletion around S atoms and electron accumulation around O atoms. From our calculation, we observed a transfer of 3.28 electrons from MoS 2 to SiO 2 in the defect-free sample, which suppresses the formation of trion in MoS 2 .…”