Interface of gallium-based liquid metals: oxide skin, wetting, and applications

Kim, Ji-Hye; Kim, Sooyoung; Dickey, Michael D.; So, Ju-Hee; Koo, Hyung-Jun

doi:10.1039/d4nh00067f

Nanoscale Horiz.

2024

DOI: 10.1039/d4nh00067f

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Interface of gallium-based liquid metals: oxide skin, wetting, and applications

Ji-Hye Kim,

Sooyoung Kim,

Michael D. Dickey

et al.

Abstract: Gallium-based liquid metals (GaLMs) are promising for a variety of applications--especially as a component material for soft devices--due to the fluidic nature, low toxicity and reactivity, and high electrical and...

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Cited by 2 publications

References 176 publications

(221 reference statements)

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Instantaneous Tiltmeter Triggered by Dynamic Wetting Behavior

Zhan,

Li,

Wang

et al. 2024

Advanced Materials

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A novel instantaneous tiltmeter with dynamic and static monitoring functions is reported that is based on liquid metal dynamic wetting behavior in a bio‐fabricated anisotropic microchannel. The proposed system achieves instantaneous tiltmeter functionality, offering a broad detection range (−90°–90°) with high precision (0.05°), a rapid reaction time (0.11 s), and enhanced durability. Moreover, a seamless integration has enabled water wave detection, language programming, and human limb monitoring. Especially, the integration of tiltmeter and a t3D motion platform results in a surface structure scanning system capable of effectively performing large area (>200 cm2) and height difference scanning functions. This innovative approach holds great potential for transformative changes in the fields of advanced manufacturing, flexible robotics, and the flexible sensing, further facilitating widespread adoption.

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Instantaneous Tiltmeter Triggered by Dynamic Wetting Behavior

Zhan,

Li,

Wang

et al. 2024

Advanced Materials

View full text Add to dashboard Cite

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Efficient and Stable Quantum‐Dot Light‐Emitting Diodes with Trilayer PIN Architecture

Wang,

Yang,

Zou

et al. 2024

Laser & Photonics Reviews

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Although the performance of quantum dot light‐emitting diodes (QLEDs) has been greatly improved in recent years, the multilayer device structure has become increasingly complex, limiting the practical application of QLEDs. Here, a novel trilayer PIN QLED with only three functional layers, which are Spiro‐OMeTAD:TFB bulk‐heterojunction (BHJ) hole transport layer (HTL), quantum‐dot emitting layer and ZnMgO electron transport layer is demonstrated. Due to the enhanced hole injection capability and suppressed electron leakage of Spiro‐OMeTAD:TFB BHJ HTL, the trilayer PIN QLED can show an excellent external quantum efficiency (EQE) of 25.1% and an impressive brightness of 299300 cd m−2 at only 8 V, which are significantly higher than those of conventional QLED. Moreover, the device stability is also remarkably improved due to the mitigation of hole accumulation and removal of unstable PEDOT:PSS. By using liquid alloy EGaIn as cathode, a fully solution‐processed vacuum‐free trilayer PIN QLED with a higher EQE of 27.3% can be further realized. The developed trilayer PIN QLEDs, with better performance and fewer functional layers, can promote the commercialization of QLED technology.

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Interface of gallium-based liquid metals: oxide skin, wetting, and applications

Abstract: Gallium-based liquid metals (GaLMs) are promising for a variety of applications--especially as a component material for soft devices--due to the fluidic nature, low toxicity and reactivity, and high electrical and...

Cited by 2 publications

References 176 publications

Instantaneous Tiltmeter Triggered by Dynamic Wetting Behavior

Instantaneous Tiltmeter Triggered by Dynamic Wetting Behavior

Efficient and Stable Quantum‐Dot Light‐Emitting Diodes with Trilayer PIN Architecture

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