Interface optical phonon modes in wurtzite quantum heterostructures

Liao, Sicheng; Dutta, Mitra; Stroscio, Michael A.

doi:10.1109/iwce.2010.5677978

2010 14th International Workshop on Computational Electronics 2010

DOI: 10.1109/iwce.2010.5677978

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Interface optical phonon modes in wurtzite quantum heterostructures

Sicheng Liao

Mitra Dutta

Michael A. Stroscio

Abstract: This paper formulated the interface optical phonon modes for two particular asymmetrical heterostructures: SiC/GaN/Vacuum and AlN/GaN/Vacuum. The interface optical phonon potentials and dispersion relations are determined for these structures. Using these results, the carrier-interfacephonon interaction Hamiltonian is formulated.

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“…Figure 1 The Dielectric Continuum model 25 describes polar optical phonons (POPs) in arbitrary heterostructures. As POP scattering is the main limitation on electron mobility in quality GaN, numerous authors have invested significant theoretical effort into the elaboration of POP spectra in various wurtzite heterostructures [26][27][28][29][30] . A structure as simple as this, in fact, can be solved analytically.…”

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Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Bader

Chaudhuri

Schubert

et al. 2019

Applied Physics Letters

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To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS.Decades after the celebrated invention of Mg p-doping 1 in Gallium Nitride (GaN) and the subsequent development of GaN-based LEDs, the manipulation of holes in GaN remains a fundamental challenge. Consequently, despite the expected dominance of GaN High Electron Mobility Transistors (HEMTs) in the coming generation of power electronics 2 and communications systems 3 , there is no complementary p-channel device which can be readily integrated. This incompleteness restricts the possible circuit topologies and system designs acheivable in GaN electronics, but arises quite straightforwardly from the physics of the GaN valence band. These bands, both heavy and deep in energy, have proven difficult to contact with typical metal workfunctions 4 , difficult to dope with high efficiency 5 , and difficult to flow current through with high conductivity. Nonetheless, the commercial interest in generating complementary GaNbased circuits 6 and scientific interest in studying highlydegenerate hole physics 7 have prompted great recent progress in p-channel devices 8 .Of the varied structures 6,9-16 which have been proposed as a platform for p-channel III-Nitride electronics, the single GaN/AlN heterojunction field-effect transistor has received recent attention for its high sheet conductance 7 and excellent device performance 8 . In this structure, depicted in Fig 1(a), the all-binary materials provide a straightforwardly repeatable growth with no possible parasitic electron channels, a tremendous holeinducing polarization-charge for low sheet-resistance, and maximal bandgaps for extreme voltage-handling capability. Given the recent reports of temperature-dependent transport studies in this heterostructure 7 , and recent first-principles suggestions of possible enhancements to hole mobility in bulk p-GaN 17 , this work presents a model to explain the measured mobility of the 2D hole a) sjb353@cornell.edu; http://sambader.net 2.5 0.0 2.5 ← k y [1/nm] k x → (b) HH LH 0 2 4 DOS [eV −1 nm −2 ] 150 100 50 0 50 Energy [meV] HH LH (c) 0 5 10 15 20 Depth [nm] E C E V E F p GaN 13nm AlN ↓ 2DHG 0.5 1.0 1.5 2.0 2.5 Effective mass [m e ] HH LH (d) (a) 0 1 f(k x ) f(k y ) FIG. 1. (a) A 13nm GaN layer on top of a thick AlN buffer induces a two-dimensional hole gas of density ∼ 4.4×10 13 /cm 2 , which is confined at the interface by strong p...

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confidence: 99%

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Bader

Chaudhuri

Schubert

et al. 2019

Applied Physics Letters

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Interface optical phonon modes in wurtzite quantum heterostructures

Cited by 1 publication

References 17 publications

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

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