2023
DOI: 10.1002/adem.202300727
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Interface Oxygen Vacancy‐Enhanced Co3O4/WO3 Nanorod Heterojunction for Sub‐ppm Level Detection of NOx

Mathankumar Manoharan,
Kamaraj Govindharaj,
Karuppasamy Muthumalai
et al.

Abstract: In this work, we developed and optimized a cobalt oxide/tungsten oxide (Co3O4/WO3) p‐n heterojunction for NOx detection. Field emission scanning electron microscopy showed that the WO3 nanorods were embellished with Co3O4 nanostructure. X‐ray photoelectron spectroscopy revealed the presence of oxygen vacancy on the Co3O4 coupled with WO3 heterojunction. Compared to bare WO3 and pure Co3O4, the Co3O4/WO3 heterojunction sensor showed significant sensitivity to NOx at 200oC. The sensor exhibited higher linearity … Show more

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Cited by 4 publications
(2 citation statements)
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“…The asymmetric O 1s peak (Figure 4c) can be fitted and differentiated into three peaks, corresponding to lattice oxygen (529.8 eV), oxygen vacancies (530.2 eV), and chemically adsorbed oxygen (531.3 eV) [22]. The proportion of oxygen vacancies was calculated to be 24.7%, which is beneficial for oxygen adsorption and dissociation on the material surface [23]. N2 adsorption-desorption isotherms were tested to investigate the specific surface area and pore structure of the obtained Co3O4.…”
Section: Resultsmentioning
confidence: 99%
“…The asymmetric O 1s peak (Figure 4c) can be fitted and differentiated into three peaks, corresponding to lattice oxygen (529.8 eV), oxygen vacancies (530.2 eV), and chemically adsorbed oxygen (531.3 eV) [22]. The proportion of oxygen vacancies was calculated to be 24.7%, which is beneficial for oxygen adsorption and dissociation on the material surface [23]. N2 adsorption-desorption isotherms were tested to investigate the specific surface area and pore structure of the obtained Co3O4.…”
Section: Resultsmentioning
confidence: 99%
“…The construction of heterojunctions is an efficient method to improve the separation efficiency of photogenerated carriers . Different types of heterojunctions are formed when semiconductors with different band structures come into contact, e.g., type-I, type-II, Z-scheme, novel S-scheme, etc. Some scholars named the direct Z-scheme heterojunction the S-scheme heterojunction for distinguishing the direct Z-scheme from the conventional Z-scheme. Both of them have the advantages of high charge separation efficiency and strong redox properties .…”
Section: Introductionmentioning
confidence: 99%