Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

Zhuo, Zeteng; Sannomiya, Yuta; Kanetani, Yuki; Yamada, Takahiro; Ohmi, Hiromasa; Kakiuchi, Hiroaki; Yasutake, Kiyoshi

doi:10.1186/1556-276x-8-201

Cited by 20 publications

(16 citation statements)

References 23 publications

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“…Zhuo et al investigated the interface properties of SiON layers prepared by atmospheric‐pressure plasma oxidation–nitridation on Czochralski silicon wafers . After annealing in forming gas for 30 min at 400 °C, they found a decrease in D it at mid gap from 2.3 × 10 12 to 6.1 × 10 11 eV −1 cm −2 , which is in the same range compared to our results.…”

Section: Resultssupporting

confidence: 87%

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Interface passivation of liquid‐phase crystallized silicon on glass studied with high‐frequency capacitance–voltage measurements

Preissler

Töfflinger

Shutsko

et al. 2016

Physica Status Solidi (a)

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The passivation quality at the interface between dielectric interlayer (IL) stacks and liquid-phase crystallized silicon (LPC-Si) was investigated by means of high-frequency capacitance-voltage (C-V) measurements. The developed device structure was based on a molybdenum layer sandwiched between the glass substrate and the IL/LPC-Si stack. C-V curves were discussed in terms of hysteresis formation and capacitance relaxation. We varied the nitrogen and hydrogen content in the a-SiO x N y :H layer adjacent to the LPC-Si and studied the effects on the defect state density at the IL/LPC-Si interface (D it ) as well as on the effective charge density in the IL (Q IL,eff ). Both parameters are crucial for the analysis of chemical and field-effect passivation. Furthermore, the effect of an additional hydrogen plasma treatment (HPT) on D it and Q IL,eff was investigated. A Gaussian-like defect distribution at around 0.1 eV above the mid gap energy is significantly reduced by the additional HPT. With additional HPT, the lowest D it and highest Q IL,eff at mid gap, i.e., D it ¼ (3.5 AE 0.7) Â 10 11 eV À1 cm À2 and Q IL,eff ¼ (1.6 AE 0.3) Â 10 12 cm À2, correspond to the passivation by an a-SiO x N y :H layer with a low nitrogen and high hydrogen content.

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Section: Resultssupporting

confidence: 87%

“…Extensive research has been done on the passivation quality in terms of D it and Q IL,eff of silicon wafers coated with SiN , SiO , and SiON . However, the passivation quality of LPC‐Si absorbers coated with SiN, SiO, or SiON might differ from that of silicon wafers due to differences in the solar cell preparation.…”

Section: Introductionmentioning

confidence: 99%

Interface passivation of liquid‐phase crystallized silicon on glass studied with high‐frequency capacitance–voltage measurements

Preissler

Töfflinger

Shutsko

et al. 2016

Physica Status Solidi (a)

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“…Hallam et al showed that the passivation provided by SiON was strongly dependent on it composition, with low NH bond density providing optimal results. In addition to PECVD, atmospheric pressure , and expanding thermal plasma methods have been explored but only poor passivation was achieved . Modest passivation has also been achieved using sputtered SiN x .…”

Section: Materials and Methods For Silicon Surface Passivationmentioning

confidence: 99%

Dielectric surface passivation for silicon solar cells: A review

Bonilla

Hoex

Hamer

et al. 2017

Physica Status Solidi (a)

236

161

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many places are now providing a substantial portion of electricity generation. Further adoption of this technology will require processing that minimises losses in device performance. A fundamental mechanism for efficiency loss is the recombination of photo-generated charge carriers at the unavoidable cell surfaces. Dielectric coatings have been shown to largely prevent these losses through a combination of different passivation mechanisms. This review aims to provide an overview of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials. The efficacy of a large set of materials and methods has been evaluated using such metrics and a discussion on the current state and prospects for further surface passivation improvements is provided.

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“…A reduction of D it,MG (from 23 × 10 11 eV −1 cm −2 to 6 × 10 11 eV −1 cm −2 ) by annealing at 400 °C for 30 min was also reported by Zhuo et al . for the SiO x N y /silicon wafer interface . The results presented here reveal that D it,MG is further reduced when igniting a hydrogen plasma during the annealing step.…”

Section: Discussionmentioning

confidence: 61%

“…For SiO x N y layers, Zhuo et al . demonstrated a fixed charge density between 5 × 10 11 cm −2 and 8 × 10 11 cm −2 correlated with the nitrogen content in the SiO x N y layer .…”

Section: Discussionmentioning

confidence: 94%

Passivation at the interface between liquid‐phase crystallized silicon and silicon oxynitride in thin film solar cells

Preissler

Töfflinger

Gabriel

et al. 2016

Progress in Photovoltaics

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The passivation quality at the interface between liquid-phase crystallized silicon (LPC-Si) and a dielectric interlayer (IL) was investigated in terms of the defect state density at the IL/LPC-Si interface (D it ) as well as the effective fixed charge density in the IL (Q IL,eff ). Both parameters were obtained via high-frequency capacitance-voltage measurements on developed metal-insulator-semiconductor structures based on a molybdenum layer sandwiched between the IL and the glass substrate. D it and Q IL,eff were correlated to the open circuit voltage (V oc ) and the integrated external quantum efficiency (J sc,EQE ) obtained on corresponding solar cell structures as well as to V oc and J sc,EQE results based on two-dimensional simulations. We found that D it was reduced by one order of magnitude using a hydrogen plasma treatment (HPT) at 400°C. Irrespectively of the HPT, Q IL,eff was > 10 12 cm À2 . We suggest that field-effect passivation dominates chemical passivation at the IL/n-type LPC-Si interface. We attribute the significant enhancement of V oc and J sc,EQE observed after HPT on n-type LPC-Si solar cells mainly to improvements of the passivation quality in the n-type LPC-Si bulk rather than at the IL/n-type LPC-Si interface. For p-type absorbers, the HPT did not improve V oc and J sc,EQE significantly. We propose that this is because of an insufficient passivation of bulk defects by positively charged hydrogen, which dominates in p-type silicon, in combination with an insufficient interface passivation.

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Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

Cited by 20 publications

References 23 publications

Interface passivation of liquid‐phase crystallized silicon on glass studied with high‐frequency capacitance–voltage measurements

Interface passivation of liquid‐phase crystallized silicon on glass studied with high‐frequency capacitance–voltage measurements

Dielectric surface passivation for silicon solar cells: A review

Passivation at the interface between liquid‐phase crystallized silicon and silicon oxynitride in thin film solar cells

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