Interface quality of SiGe oxide prepared by RF plasmaanodisation

Goh, I.S.; Hall, S.; Eccleston, W.; Zhang, J.F.; Werner, K.

doi:10.1049/el:19941315

Cited by 22 publications

(10 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The C49-Ti(Si 1Ϫy Ge y ) 2 was no longer present in the reaction path of Ti-Si 1Ϫx Ge x as xм0. 7. It showed that the reaction followed that of the Ti-Ge system.…”

Section: A Phase Formationmentioning

confidence: 92%

Effects of composition on the formation temperatures and electrical resistivities of C54 titanium germanosilicide in Ti–Si1−xGex systems

Lai

Chen

1999

Journal of Applied Physics

View full text Add to dashboard Cite

Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applicationsThe effects of alloy composition on the formation temperature and electrical resistivities of C54 titanium germanosilicide formed during the Ti/Si 1Ϫx Ge x (xϭ0, 0.3, 0.4, 0.7, 1͒ solid state reaction have been investigated. Ti 5 (Si 1Ϫy Ge y ) 3 , C49-and C54-Ti(Si 1Ϫz Ge z ) 2 were observed to form in the Ti/Si 1Ϫx Ge x (xу0.4) systems. On the other hand, Ti 6 (Si 1Ϫy Ge y ) 5 and C54-Ti(Si 1Ϫz Ge z ) 2 were found in the Ti/Si 1Ϫx Ge x (xм0.7) systems. For both cases, the relationship of xϾyϾz was found. The appearance and agglomeration temperature of low-resistivity C54-Ti(Si 1Ϫz Ge z ) 2 were both found to decrease with the Ge concentration. The resistivities of C54-Ti(Si 1Ϫz Ge z ) 2 were measured to be 15-20 ⍀/cm. The segregation of Si 1Ϫw Ge w (wϾx) was found in all samples annealed above 800°C. The effects of thermodynamic driving force, kinetic factor, and composition of the micro-area are discussed.

show abstract

“…The C49-Ti(Si 1Ϫy Ge y ) 2 was no longer present in the reaction path of Ti-Si 1Ϫx Ge x as xм0. 7. It showed that the reaction followed that of the Ti-Ge system.…”

Section: A Phase Formationmentioning

confidence: 92%

Effects of composition on the formation temperatures and electrical resistivities of C54 titanium germanosilicide in Ti–Si1−xGex systems

Lai

Chen

1999

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Unfortunately, the growth of conventional (high-temperature) thermal oxides on Si:SiGe can lead to material degradation due to strain relaxation, dopant and Ge diffusion, or the propagation of dislocations [1][2][3]. To address these problems a variety of methods have been used to grow low-temperature oxides on both Si:SiGe [3][4][5] and SiGe [6][7][8]. In this letter we report on the first attempt to grow a low-temperature oxide on Si:SiGe using electrochemical anodic oxidation.…”

Section: Introductionmentioning

confidence: 99%

MOS gated Si:SiGe quantum wells formed by anodic oxidation

Yeoh

Green

Thornton

et al. 1998

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Abstract.We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

show abstract

“…Several methods have been developed to overcome these problems. Among these methods are plasma-assisted oxidation, 3) microwave plasma, 4) electron cyclotron resonance (ECR), 5) and direct photo-chemical vapor deposition (CVD). 6) However, these methods either result in plasmainduced damage or require expensive equipment.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide

Kung¹,

Hwang

Chen

et al. 2009

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Room-temperature (30 C) silicon dioxide (SiO 2 ) has been grown on strained SiGe layers by liquid-phase deposition (LPD). Metal-oxidesemiconductor (MOS) capacitors have also been fabricated by annealing at various temperatures (200 -400 C) in nitrogen. A very low leakage current density of 3:25 Â 10 À8 A/cm 2 was obtained at an electric field of 10 MV/cm for as-grown LPD-SiO 2 films. After annealing, the leakage current density decreased by one order of magnitude and the fixed oxide charge density also significantly decreased to 4:7 Â 10 9 cm À2 in the capacitor annealed at 400 C. The mechanism by which this occurred is explained.

show abstract

Interface quality of SiGe oxide prepared by RF plasmaanodisation

Cited by 22 publications

References 6 publications

Effects of composition on the formation temperatures and electrical resistivities of C54 titanium germanosilicide in Ti–Si1−xGex systems

Effects of composition on the formation temperatures and electrical resistivities of C54 titanium germanosilicide in Ti–Si1−xGex systems

MOS gated Si:SiGe quantum wells formed by anodic oxidation

Investigation of Electrical Properties of Thermally Annealed SiGe Metal–Oxide–Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon Dioxide

Contact Info

Product

Resources

About