Interface Related Substrate Effect in Metal–Semiconductor Field Effect Transistors

Abstract

The interface related substrate effect on the dc characteristics of a MESFET structure has been studied. It has been shown that the interface states at the channel–substrate interface have a pronounced effect on the performance of the device. The pinch‐off and threshold voltages of the device are found to be sensitive to the interface state density. Moreover, the threshold voltage drifts appreciably with the temperature. The proposed mechanism ultimately causes a substantial decrease in the channel current.

The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor

“…Metal-semiconductor field effect transistors (MESFETs) have been the subject of a number of investigations in the past [1][2][3][4][5][6][7][8]. These devices seem to be attractive not only for their various circuit applications, but also for their potential applications such as optical field effect transistors (OPFETs) [9].…”