Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

Haripriya, G. R.; Noh, Hee Yeon; Lee, Chan; Kim, June-Seo; Lee, Myoung-Jae; Lee, Hyeon-Jun

doi:10.1039/d3nr02591h

Cited by 9 publications

(1 citation statement)

References 71 publications

(229 reference statements)

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“…It is used in thin-film transistors, novel memory devices, and three-dimensional integrated devices. 1–4 This is owing to its notable attributes such as a large bandgap, high electron mobility, and low processing temperature. As the device size becomes smaller, the source–drain contact resistance becomes the main factor limiting the performance improvement of the device.…”

Section: Introductionmentioning

confidence: 99%

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

Xu,

Luo,

Zhan

et al. 2024

Phys. Chem. Chem. Phys.

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Section: Introductionmentioning

confidence: 99%

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

Xu,

Luo,

Zhan

et al. 2024

Phys. Chem. Chem. Phys.

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Speckle Pattern Analysis of PVK:rGO Composite Based Memristor Device

Jamali,

Sajjadi,

Taherkhani

et al. 2024

Macro Materials & Eng

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The memristors are expected to be fundamental devices for neuromorphic systems and switching applications. The device made of a sandwiched layer of poly(N‐ vinylcarbazole) and reduced graphene composite between asymmetric electrodes (ITO/PVK:rGO/Al) exhibits bistable resistive switching behavior. The performance of the memristor can be optimized by controlling the doped graphene oxide. To assess the device performance when it switches between ON and OFF states, optical characterization approaches are highly promising due to their non‐destructive and remote nature. Here, speckle pattern (SP) analysis to this end is introduced. SPs include a huge amount of information about their generating mechanism, which is extracted through statistical elaboration. SPs of the PVK:rGO in different states in situ and examine the conduction mechanism is acquired. The variations in the statistical parameters are attributed to the resistance state of the PVK:rGO with regard to the physical switching mechanism. The resistance/conduction state, in turn, depends on the activity and properties of PVK:rGO memristors, as well as the additional non‐uniformities induced through the variations of density of carriers. The present optical methodology can be potentially served as a bench‐top device for characterization purposes of similar devices during their operating.

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Investigation of Filament Formation and Surface Perturbation in Nanoscale-Y2O3 Memristor: A Physical Modeling Approach

Kumar,

Dubey,

Nawaria

et al. 2024

J. Electron. Mater.

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Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory

Abstract: The analog resistive switching properties of amorphous InGaZnOx (a-IGZO)-based devices with Al as the top and bottom electrodes and an Al-Ox interface layer inserted on the bottom electrode are presented...

Cited by 9 publications

References 71 publications

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

Speckle Pattern Analysis of PVK:rGO Composite Based Memristor Device

Investigation of Filament Formation and Surface Perturbation in Nanoscale-Y2O3 Memristor: A Physical Modeling Approach

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