Interface roughness in short-period InGaAs∕InP superlattices

Pusep, Y.-U. A.; Gozzo, G C; LaPierre, Ray

doi:10.1063/1.3050531

Cited by 9 publications

(1 citation statement)

References 15 publications

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“…Apparently, the scale of the random potential determines the region where interference takes place. The spatial characteristics of the random interface potential of similar short-period GaAs/AlGaAs SLs were obtained in [22], where the average length of the interface roughness of about 6-25 nm, respectively, was reported. Based on this scale, it can be concluded that in the case of localization induced by a random interface potential, the area in which the electronic coherence is preserved should be about or greater than 25 nm.…”

Section: Resultsmentioning

confidence: 99%

Effect of magnetic field on recombination dynamics in random electron systems

Tito Patricio,

Pusep

2023

Phys. Scr.

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The evolution of localized electron states with increasing magneticeld is studied using time-resolved photoluminescence in GaAs/AlGaAs short-period superlattices, in which electrons are localized due to quantum interference between electron waves multiply scattered by the short-range potential of a random interface roughness. The nature of electronic states, extended or localized, is fundamentally related to the rate of their recombination, which is determined by the exciton coherence volume. Localization reduces the volume of exciton coherence, thereby decreasing the recombination rate. Correspondingly, the recombination rate in insulating samples turned out to be much lower than in metallic ones. Moreover, in insulating samples, the recombination rate increased with increasing temperature and magneticeld, which was found consistent with the temperature and magneticeld dependences of the electrical resistance. The observed increase in the recombination rate is attributed to the break-down of the quantum interference, leading to delocalization.

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Section: Resultsmentioning

confidence: 99%

Effect of magnetic field on recombination dynamics in random electron systems

Tito Patricio,

Pusep

2023

Phys. Scr.

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Electron and hole scattering in short-period InGaAs/InP superlattices

Pusep

Gold

Mamani

et al. 2011

Journal of Applied Physics

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The combination of photoluminescence and magneto-transport measurements is used to study the single-particle relaxation time and the transport scattering time in short-period InGaAs/InP superlattices. Both the single-particle relaxation times of the electrons and of the holes were obtained in the same samples and were shown to be determined by the remote-impurity scattering. The transport scattering time for electrons was found to be dominated by the interface-roughness scattering with lateral length Λ=10 nm and height Δ = 0.13 nm. We also discuss the importance of multiple-scattering effects for small well widths and of alloy scattering for large well widths.

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Calculation of interface roughness scattering-limited vertical and horizontal mobilities in InAs/GaSb superlattices as a function of temperature

Szmulowicz

Brown

2013

Journal of Applied Physics

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Superlattice transport has acquired new relevance owing to the current interest in InAs/GaSb and other superlattices (SL) for third-generation infrared detector focal plane arrays. Interface-roughness scattering (IRS) is known to limit carrier mobilities at low temperatures. Whereas horizontal (in-plane) transport measurements are standard, perpendicular transport measurements (across SL layers)—the ones relevant to the operation of infrared sensors—are non-routine and seldom performed; vertical SL transport is also less well studied theoretically. Therefore, we extend our previous work on low-temperature SL transport by studying horizontal and vertical IRS-limited transport in InAs/GaSb SLs as a function of temperature, SL parameters, and the degree of roughness. Electron mobilities are calculated by solving the Boltzmann equation with temperature-dependent bands and carrier screening, and the results are discussed by analyzing the behavior of the relaxation rates and spectral mobilities, defined as mobilities as a function of carrier energy. New computational tools are devised to handle the implicit integral equation for the horizontal relaxation rates. We find that the behavior of the relaxation rates and spectral mobilities undergoes a change for energies below and above the conduction band bandwidth, which dictates the ultimate behavior of mobilities as a function of temperature. The calculated mobilities are found to display a rich variety of behaviors as a function of temperature, either increasing, decreasing, or remaining relatively constant, depending on the correlation length of interface roughness, Λ, and the conduction band bandwidth. Since the horizontal mobility is a double-valued function of Λ, the temperature dependence of mobilities can be used to eliminate this indeterminacy in order to assess the degree of interface roughness.

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Interface roughness in short-period InGaAs∕InP superlattices

Cited by 9 publications

References 15 publications

Effect of magnetic field on recombination dynamics in random electron systems

Effect of magnetic field on recombination dynamics in random electron systems

Electron and hole scattering in short-period InGaAs/InP superlattices

Calculation of interface roughness scattering-limited vertical and horizontal mobilities in InAs/GaSb superlattices as a function of temperature

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