Organic materials that undergo singlet exciton fission show promise as exciton multiplication materials for semiconductor solar cells by converting high-energy photons into pairs of spin-triplet excitons. However, singlet fission-based solar cells have experienced delayed implementation due to inefficient triplet transfer from organic light-absorbing layers to semiconductor energy acceptors, such as bulk silicon. As triplet transfer requires orbital overlap between the triplet-excited organic molecule and semiconductor energy acceptor, transfer will be dictated by the structure of the interface connecting these materials. Rational design and control of transfer requires detailed information about the structural and energetic environment of this buried interface, which is difficult to probe experimentally. To this end, electronic sum-frequency generation (ESFG), a noninvasive spectroscopy, can address this need by providing interface-selective information about both the molecular order and electronic structure of organic:semiconductor junctions. Here, we demonstrate ESFG's potential by comparing the buried interfacial structure of two singlet fission-capable perylenediimide derivatives deposited as thin films on glass. We find ESFG spectra signal a prominent narrowing of the bandgap of each perylenediimide derivative at the glass interface relative to their bulk, which we show is consistent with a subangstrom change in intermolecular packing at the buried interface. In addition, analysis of the polarization dependence of measured ESFG spectra shows that each derivative adopts different orientations of their perylene cores with respect to the substrate, which has important consequences for achieving exciton transfer across triplet-extracting semiconductor junctions.