Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing

Park, Kitae; Chung, Peter Hayoung; Sahu, Dwipak Prasad; Yoon, Tae‐Sik

doi:10.1016/j.mssp.2022.106718

Cited by 6 publications

(5 citation statements)

References 37 publications

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“…In agreement with other investigations, these results suggest that our device exhibits short- and long-term data storage properties. This valuable quality makes it well-suited for the design of neuromorphic circuits, thus pushing forward the development of artificial intelligence technologies. − …”

Section: Resultsmentioning

confidence: 99%

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Romo,

Soto,

Tiznado

2024

ACS Appl. Electron. Mater.

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This investigation explores the resistive switching and energy storage capabilities of 100 nm yttria-stabilized zirconia (YSZ) thin films in a metal-oxide-semiconductor (MOS) configuration. Under soft voltage and temperature conditions, the device primarily functions as a conventional MOS capacitor with excellent insulating properties. However, upon exceeding a voltage threshold of 10.5 V, the resistive switching mechanisms are triggered. The multilevel memory properties of the device were investigated by employing triangular-shaped voltage pulses. The results showed excellent control of the resistance states through the intensity of the applied voltage. Furthermore, state retention experiments revealed a transition from short-to long-term data storage properties, holding promising characteristics for the development of neuromorphic materials. To gain a deeper understanding of the internal mechanisms in YSZ thin films, a combination of chronoamperometric and impedance spectroscopy analyses were performed. Through these results, we found that the induction of resistive switching mechanisms correlates with an increase in permittivity. This characteristic distinguishes them from traditional devices, where the capacitive properties typically decrease after the switching process. Additionally, we investigate the influence of temperature on the energy storage functionality of the device. Remarkably, as the temperature rises from 25 to 60 °C, the electrical response of the films resembles that of a supercapacitor. Furthermore, electrode/electrolyte reactions occur at temperatures from 60 to 100 °C, resulting in a pseudocapacitive performance comparable to commercial batteries in terms of energy and power densities.

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Section: Resultsmentioning

confidence: 99%

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Romo,

Soto,

Tiznado

2024

ACS Appl. Electron. Mater.

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“…These time-dependent characteristics show the potential of the device to emulate the synaptic properties such as PPF, STP and LTP. However, even with the potential application of time-dependent characteristics, this decay of conductance over time frequently observed in the interface-type devices 7,62 needs to be alleviated to achieve longterm reliability of weight storage.…”

Section: Resultsmentioning

confidence: 99%

Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoO_x/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution

Jeong,

Chung,

Han

et al. 2024

Nanoscale

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“…In addition, the annealing process is performed after CeO 2 film deposition, leading to a bottom interface, whereas the top interface does not experience annealing. Consequently, asymmetric electrical characteristics are achieved [26]. RS characteristics have also been exhibited by completely transparent ITO/CeO 2 /ITO devices.…”

Section: Threshold Ceo 2 -Based Memristorsmentioning

confidence: 95%

“…Here, it has been concluded that the resistance variations are strictly voltagedriven, thereby tuning the Pt/CeO 2 junctions. Necessarily, controllable interfacial layers are considered to be decisive toward synergetic synaptic operations [26].…”

Section: Short-and Long-term Plasticitymentioning

confidence: 99%

“…For the advancement in analog resistance variation in Pt/CeO 2 /Pt memristors, an approach involving altering the post-deposition annealing environment for changing the switching parameters of the CeO 2 synapse-based layer has been widely studied. However, from the conduction mode investigation data and spectroscopic study of chemical-bonding states, the reference device was found to be capable of voltage-controlled operation due to Pt/CeO 2 interfacial contacts [26]. Furthermore, researchers have worked on many artificial intelligence-based devices showing functions identical to those of neurons to function in several tasks such as visual recognition, audio recognition, and artificial nociceptor functioning [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

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Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing

Ali,

Ullah,

Raza

et al. 2023

Nanomaterials

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This review article attempts to provide a comprehensive review of the recent progress in cerium oxide (CeO2)-based resistive random-access memories (RRAMs). CeO2 is considered the most promising candidate because of its multiple oxidation states (Ce3+ and Ce4+), remarkable resistive-switching (RS) uniformity in DC mode, gradual resistance transition, cycling endurance, long data-retention period, and utilization of the RS mechanism as a dielectric layer, thereby exhibiting potential for neuromorphic computing. In this context, a detailed study of the filamentary mechanisms and their types is required. Accordingly, extensive studies on unipolar, bipolar, and threshold memristive behaviors are reviewed in this work. Furthermore, electrode-based (both symmetric and asymmetric) engineering is focused for the memristor’s structures such as single-layer, bilayer (as an oxygen barrier layer), and doped switching-layer-based memristors have been proved to be unique CeO2-based synaptic devices. Hence, neuromorphic applications comprising spike-based learning processes, potentiation and depression characteristics, potentiation motion and synaptic weight decay process, short-term plasticity, and long-term plasticity are intensively studied. More recently, because learning based on Pavlov’s dog experiment has been adopted as an advanced synoptic study, it is one of the primary topics of this review. Finally, CeO2-based memristors are considered promising compared to previously reported memristors for advanced synaptic study in the future, particularly by utilizing high-dielectric-constant oxide memristors.

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Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing

Cited by 6 publications

References 37 publications

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoO_x/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution

Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing

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Interface state-dependent synaptic characteristics of Pt/CeO2/Pt memristors controlled by post-deposition annealing

Cited by 6 publications

References 37 publications

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Exploring the Bifunctionality of YSZ Thin Films in MOS Structures: Bridging the Gap between RRAM and Super-Pseudocapacitor Technologies

Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution

Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing

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Product

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Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoO_x/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution