Interface state effects in GaN Schottky diodes

Graphene-GaN Schottky diodes

“…Particularly, the D s (V) showed a bellshaped behavior with its maximum at around ~0.8 eV, indicating that the deep-level states are located 0.8 eV below the conduction band (E C ) edge. This position is slightly larger than the commonly observed level of E C  0.6 eV associated with nitrogen antisites (N Ga ) [54], while it corresponds to the levels of 0.73 and 0.89 eV observed in n-GaN grown on SiC [59]. Meanwhile, as suggested in the literature [54], the deep-level states might originate from the interfacial oxide generated during the processing step, which should be further investigated.…”

“…This position is slightly larger than the commonly observed level of E C  0.6 eV associated with nitrogen antisites (N Ga ) [54], while it corresponds to the levels of 0.73 and 0.89 eV observed in n-GaN grown on SiC [59]. Meanwhile, as suggested in the literature [54], the deep-level states might originate from the interfacial oxide generated during the processing step, which should be further investigated. Based on our findings, the fact that the n value is larger than unity is primarily due to the deeplevel states of GaN associated with native defects.…”

“…In Fig. 3(b), note that the n value has a bell-shaped behavior with its maximum at around 0.08 V, which is indicative of the presence of surface states, as reported for GaAs [52], InP [53], and GaN [54]. Assuming that these surface states are in equilibrium with the GaN, the density of surface states (D s ) can be estimated according to Nano Res.…”

Transport mechanisms in Schottky diodes realized on GaN

“…This is probably due to a high value of the series resistance in our structures and a large ideality factor which can be, depending on the applied voltage [2,7].…”

“…Even if the industrial components based on GaN have evolved [1,2,3], a number of differences still persist about the physical mechanisms that manage the electronic transport in these components and a wide diversity of interpretations can be found in the literature. The study presented in this work aims to understand and also to control the transport phenomena which are the basis of operation of the performed structures.…”