Interface Structure, Adhesion, and Ion Beam Processing

Baglin, J. E. E.

doi:10.1007/978-94-011-0077-9_4

Cited by 10 publications

(3 citation statements)

References 46 publications

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“…It has been reported that a treatment with an ion beam can make a Teflon surface wettable. [10] We found that ion milling the Teflon AF films with pure Ar at 500 eV and 0.2 mA·cm −2 for 15 sec made the films wettable by photoresist. A smooth, even photoresist coating was obtained even after the ion milling treated samples were exposed to air for 24 hours.…”

Section: Resultsmentioning

confidence: 81%

Patterning amorphous fluoropolymer films by reactive ion milling

Denhoff

Gao

1997

Journal of Elec Materi

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Amorphous fluoropolymer films have low dielectric constants and high chemical resistance and, so, have potential to be used as the insulator for high speed interconnects and as protection layers. Many applications would require high resolution patterning of the fluoropolymer film. We have found that these films are easily etched by reactive ion beam etching using an O 2 /Ar gas mixture. High etching rates of 600 nm/min with a 0.2 mA/cm −2 , 500 eV ion beam were obtained. This technique allows good selectivity with typical underlayers such as Si, Au, and photoresist. We have also found that a short Ar ion milling of the fluoropolymer surface allows good wettability of the film by photoresist.

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Section: Resultsmentioning

confidence: 81%

Patterning amorphous fluoropolymer films by reactive ion milling

Denhoff

Gao

1997

Journal of Elec Materi

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“…The weak adhesion between the metallic film and the oxide substrate can be improved by inserting an adhesion layer of refractory metals with large heats of oxide formation such as Ti or Ta between Pt and SiO 2. [26][27][28][29][30] Film adhesion also can be improved by ionbeam mixing [31] or sputtering Pt in an Ar─O 2 mixture. [32] It is not clear why the 20 nm thermal SiO 2 diffusion barrier is more effective in resisting Pt dewetting than the 50 nm layer.…”

Section: Resultsmentioning

confidence: 99%

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO₂ Diffusion and Reaction Barriers

Akbarnejad,

Kostka,

et al. 2024

Adv Materials Inter

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Interactions at high temperatures between thin films and the Si substrate limit materials discovery using combinatorial processing platforms (CPPs). To overcome this, a diffusion and reaction barrier, SiO2, by thermal oxidation of Si tips is developed. The application of this diffusion barrier in CPPs for atomic‐scale investigations of new materials in atom probe tomography is reported. Thermal SiO2 layers (20 and 50 nm thick) are examined as barriers to separate coatings from Si tips. Pt is chosen as it easily forms silicides. CPPs are sequentially annealed in vacuum at 400 °C for 10 h, 600 °C for 2 h, and 800 °C for 2 h. The thermal SiO2 diffusion barrier remains stable and prevents intermixing at least up to 800 °C. Moreover, it provides improved film adhesion as dewetting of Pt on the oxide surface occurred at 800 °C instead of 600 °C without a thermal diffusion barrier. A comprehensive structural and chemical analysis of the Pt film, the thermal SiO2 layer, and their interfaces is performed using scanning and transmission electron microscopy, and atom probe tomography. As a result, the thermal SiO2 forms a stable barrier, even at the lowest thickness of 20 nm, avoiding the formation of Pt silicides, even at 800 °C.

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“…In part because Pt does not oxidize readily, it is an attractive metallization choice for high-temperature-oxidizing environments, but its nobility complicates the fabrication of durable films on unreactive substrates because Pt does not alloy at the interface with the substrate. Advanced techniques exist to improve film adhesion such as ion-beam mixing [199]. It is also possible to promote adhesion of a Pt film directly on the SiO 2 substrate by sputtering the Pt in an Ar-O 2 mixture [200].…”

Section: Adhesion Layers For Pt On Siomentioning

confidence: 99%

Platinum metallization on silicon and silicates

Taylor

2021

Journal of Materials Research

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Thin films of platinum deposited by physical vapor deposition (PVD) processes such as evaporation and sputtering are used in many academic and industrial settings, for example to provide metallization when tolerance to corrosive thermal cycling is desired, or in electrocatalysis research. In this review, various practical considerations for platinum (Pt) metallization on both Si and SiO 2 are placed in context with a comprehensive data review of diffusion measurements. The relevance of diffusion phenomena to the development of microstructure during deposition as well as the effect of microstructure on the properties of deposited films are discussed with respect to the Pt-Si system. Since Pt and Si readily form silicides, diffusion barriers are essential components of Pt metallization on Si, and various failure modes for diffusion barriers between Pt and Si are clarified with images obtained by electron microscopy. Adhesion layers for Pt films deposited on SiO 2 are also considered.

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Interface Structure, Adhesion, and Ion Beam Processing

Cited by 10 publications

References 46 publications

Patterning amorphous fluoropolymer films by reactive ion milling

Patterning amorphous fluoropolymer films by reactive ion milling

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO₂ Diffusion and Reaction Barriers

Platinum metallization on silicon and silicates

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Interface Structure, Adhesion, and Ion Beam Processing

Cited by 10 publications

References 46 publications

Patterning amorphous fluoropolymer films by reactive ion milling

Patterning amorphous fluoropolymer films by reactive ion milling

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO2 Diffusion and Reaction Barriers

Platinum metallization on silicon and silicates

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Product

Resources

About

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO₂ Diffusion and Reaction Barriers