Interface structure and strain relaxation in BaTiO3 thin films grown on GdScO3 and DyScO3 substrates with buried coherent SrRuO3 layer

Chen, Y. B.; Sun, Haiping; Katz, Michael B.; Pan, Xiaoqing; Choi, Kyoung Jin; Jang, Ho Won; Eom, C. B.

doi:10.1063/1.2819684

Cited by 32 publications

(21 citation statements)

References 25 publications

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“…When a film exceeds a certain threshold thickness, called the critical thickness, it exhibits lattice relaxation by introducing defects that allow the lattice constants to approach bulk values. [1][2][3][4][5] Many physical properties can be altered by epitaxial strain, including the highly desirable "ferroic" orderings (memory effects), where the interatomic distances can play a crucial role. For example, the transition temperature of ferromagnetic and ferroelectric (FE) ordering can drastically change, as can the magnitude of the associated order parameters.…”

mentioning

confidence: 99%

Multiferroic properties of uniaxially compressed orthorhombic HoMnO3 thin films

Shimamoto

Windsor

et al. 2016

Applied Physics Letters

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Multiferroic properties of orthorhombic HoMnO 3 (Pbnm space group) are significantly modified by epitaxial compressive strain along the a-axis. We are able to focus on the effect of strain solely along the a-axis by using an YAlO 3 (010) substrate, which has only a small lattice mismatch with HoMnO 3 along the other in-plane direction (the c-axis). Multiferroic properties of strained and relaxed HoMnO 3 thin films are compared with those reported for bulk, and are found to differ widely. A relaxed film exhibits bulk-like properties such as a ferroelectric transition temperature of 25 K and an incommensurate antiferromagnetic order below 39 K, with an ordering wave vector of (0 q b 0) with q b ≈ 0.41 at 10 K. A strained film becomes ferroelectric already at 37.5 K and has an incommensurate magnetic order with q b ≈ 0.49 at 10 K.

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mentioning

confidence: 99%

Multiferroic properties of uniaxially compressed orthorhombic HoMnO3 thin films

Shimamoto

Windsor

et al. 2016

Applied Physics Letters

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“…Eom and co‐workers used these two models to estimate the critical thickness of SrRuO 3 and BaTiO 3 films on DyScO 3 and GdScO 3 substrates, respectively. The energy balance model shows that h c of this system with a 2% mismatch is about 20 nm, and that is about 100 nm for this system with 1% mismatch, as shown in Figure d …”

Section: Mismatch and Strainmentioning

confidence: 83%

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

et al. 2018

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Complex metal oxides, which show a variety of functional properties such as ferromagnetism, ferroelectricity, multi-ferroelectricity, superconductivity, and ionic conduction, have attracted much attention in the past decades. These exotic physical properties arise from a complex hierarchy of competing interactions among spin, charge, orbital, and lattice degrees of freedom. The development of advanced characterization techniques such as electron microscopy, neutron scattering, synchrotron scattering and imaging, spectroscopy at high magnetic fields, and others has enabled us to study the interactions among these degrees of freedom coupled with strain, defect, and interface Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized. Thin FilmsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201803241. 12 11 12where c 11 and c 12 are elastic moduli of the film material. Epitaxial strain gradually changes with film thickness in perovskite manganites. Figure 3 shows reciprocal space mapping or RSM (103) of La 0.7 Ca 0.3 MnO 3 (LCMO) films on STO (001) substrates. It captures the gradual strain relaxation process with increasing film thickness in manganite thin films. When the film is very thin, the interface is coherent with

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“…Films deposited above T s = 450 °C are more insulating, with a monotonic reduction of the leakage current with Ts, presenting the T s = 750 °C samples leakage current below 1x10 -7 A/cm 2 and 4x10 -6 A/cm 2 at 45 and 225 kV/cm, respectively. We emphasize that the leakage of these films is comparable to state of the art BTO films on perovskite single crystalline substrates 5,7 or to thick epitaxial Pb(Zr,Ti)O 3 films on Si(001). 18 The impact of the deposition temperature on the properties of BTO is schematized in Fig.…”

Section: (E)mentioning

confidence: 85%

“…1,2 However, conventional substratebased strain engineering is restricted to relatively small ranges of strain and film thickness due to plastic relaxation. [3][4][5] Moreover, it is based on the selection of a specific substrate, whereas most applications require integration with silicon. Therefore, alternatives to the usual substrate engineering are needed, and some unconventional methods have been already developed.…”

Section: Tailoring Lattice Strain and Ferroelectric Polarization Of Ementioning

confidence: 99%

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Lyu

Fina

Solanas

et al. 2018

Sci Rep

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Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 °C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films.

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Interface structure and strain relaxation in BaTiO3 thin films grown on GdScO3 and DyScO3 substrates with buried coherent SrRuO3 layer

Abstract: Articles you may be interested in Strain relaxation of epitaxial ( Ba 0.6 Sr 0.4 ) ( Zr 0.3 Ti 0.7 ) O 3 thin films grown on SrTiO 3 substrates by pulsed laser deposition

Cited by 32 publications

References 25 publications

Multiferroic properties of uniaxially compressed orthorhombic HoMnO3 thin films

Multiferroic properties of uniaxially compressed orthorhombic HoMnO3 thin films

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

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