Interface tailoring effect on magnetic properties and their utilization in MnGa-based perpendicular magnetic tunnel junctions

L., Q.; Kubota, Takahide; Mizukami, Shigemi; Zhang, X. M.; Naganuma, Hiroshi; Oogane, Mikihiko; Ando, Yasuo; Miyazaki, T.

doi:10.1103/physrevb.87.184426

Cited by 42 publications

(43 citation statements)

References 34 publications

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“…The transport properties were measured using a typical four-probe system at room temperature. 7,11 Figure 1 11 For the MnGa/Fe samples, the M r /A value is 1.38 memu/cm 2 for t Fe ¼ 0.4 nm, which is larger than that for the 30-nm MnGa layer (1.2 memu/cm 2 ). This indicates that the magnetization of the Fe layer is aligned parallel to that of the MnGa layer when the field is zero, which is consistent with our previous results.…”

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confidence: 90%

“…This is consistent with the presence of ferromagnetic coupling between MnGa and Fe. 11 In addition, the M r /A values of MnGa/Fe/Co are smaller than those of MnGa/Fe. This indicates the antiparallel configuration of magnetizations of the Co layer and the MnGa/Fe structure as demonstrated in Fig.…”

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confidence: 92%

“…This indicates that the magnetization of the Fe layer is aligned parallel to that of the MnGa layer when the field is zero, which is consistent with our previous results. 11 Upon comparison with the corresponding MnGa/Fe sample, the MnGa/Fe/Co sample shows a decrease in M r /A with a value of 1.16 memu/cm 2 . The H c value of the sample is 6.2 kOe, which is considerably larger than the corresponding value of 4.3 kOe for the MnGa/Fe sample.…”

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confidence: 92%

“…Regarding the Co interlayer, in particular, an inverted MR(H) loop was observed due to antiferromagnetic coupling in the MnGa/Co interface. 7,11 In this study, we introduced a thin Fe layer between MnGa and Co to further improve the interface quality and enhance the MR ratio. An apparent MR enhancement was achieved for an Fe-layer thickness of around 0.3 nm.…”

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confidence: 99%

“…Since the Co layer dominates the spin-dependent tunneling process in MTJs with the MnGa/Fe/Co electrode, we use the same method to analyze the MR(H) loops of the MTJs as that used for MnGa/Fe and MnGa/Co-based MTJs. 7,11 The free energy of magnetization for the Co layer is given by…”

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confidence: 99%

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Perpendicularly Magnetized Mn_xGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications

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Magnetic tunnel junctions (MTJs) exhibit a great profusion of unique functional properties, such as nonvolatility, scalability, high endurance, and low power consumption. For this reason, they have been widely investigated in spin‐based logic and memory devices. Compared with conventional in‐plane MTJs, perpendicular MTJs (pMTJs) enable lower critical switching current and higher integration density. So far, CoFeB/MgO structures with interface‐induced perpendicular magnetic anisotropy (PMA) are the most common ferromagnetic (FM) electrodes in pMTJs, whereas their relatively weak interfacial PMA restricts further development of device nodes. In the past decade, perpendicularly magnetized MnxGa binary alloys, including FM L10‐MnGa and ferrimagnetic D022‐Mn3Ga, have drawn intense attention for serving as a promising magnetic electrode in various MTJ stacking structures because of their large PMA, high spin polarization, and small magnetic damping constant. From an application perspective, MTJs with ultrathin MnxGa electrode show merits in developing high‐density magnetic memory, high‐frequency spin‐torque oscillators, and tunneling magnetoresistance effect‐based high‐field sensors. Herein, the aim is to provide a comprehensive review of recent progress in perpendicularly magnetized MnxGa‐based MTJs. The conclusions and future prospects are also given to inspire more in‐depth research and advance the practical applications.

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Element-Specific Spin States in Heusler-Alloy Compounds Probed by X-Ray Magnetic Spectroscopy

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Interface tailoring effect on magnetic properties and their utilization in MnGa-based perpendicular magnetic tunnel junctions

Cited by 42 publications

References 34 publications

Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer

Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer

Perpendicularly Magnetized Mn_xGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications

Element-Specific Spin States in Heusler-Alloy Compounds Probed by X-Ray Magnetic Spectroscopy

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Interface tailoring effect on magnetic properties and their utilization in MnGa-based perpendicular magnetic tunnel junctions

Cited by 42 publications

References 34 publications

Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer

Tunneling magnetoresistance effect in MnGa based perpendicular magnetic tunnel junction with Fe/Co interlayer

Perpendicularly Magnetized MnxGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications

Element-Specific Spin States in Heusler-Alloy Compounds Probed by X-Ray Magnetic Spectroscopy

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Perpendicularly Magnetized Mn_xGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications