Interface traps in jet-vapor-deposited silicon nitride–silicon capacitors

Abstract

The properties of interface traps in metal–silicon nitride (deposited by jet vapor deposition technique) –silicon (MNS) capacitors have been studied in some detail. In comparison with those in metal–oxide–Si capacitors, the interface traps in our MNS capacitors exhibit the following major differences: (i) ∼2 orders of magnitude higher time constants; (ii) no evidence of two distinguishable defects following irradiation as revealed by the ac conductance measurement; and (iii) absence of latent generation of interface traps following irradiation. On the other hand, the interface-trap transformation process following irradiation is qualitatively similar in silicon nitride and thermal oxide devices.

Global and local charge trapping in carbon nanotube field-effect transistors

“…The origin of the hysteresis in our devices could be trapped charges located (1) in adsorbed water molecules or/and IPA on the surface of the CNT-channel [10,11], (2) on the Si 3 N 4 film due to surface charges, (3) in the bulk of SiO 2 film, (4) in the bulk of Si 3 N 4 film, and (5) at the Si 3 N 4 /CNT/SiO 2 interface [22]. The water-related traps are usually found to dominate in as-prepared CNTFETs before coating the top dielectric layer.…”

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

“…Recently, supersonic jets were found to produce gate-quality silicon nitride that was comparable with thermal SiO 2 . 105,106 A coaxial set of nozzles, with SiH 4 seeded in He in the inner nozzle and N 2 seeded in He in the outer nozzle in combination with a microwave discharge was used. 107,108 The reactive Si and N species were carried by the jet to a silicon substrate at room temperature.…”

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

“…Low temperature deposition of dielectric thin films has been a topic of extensive research in various application fields that rely on heat and/or damage vulnerable materials. Among materials for the dielectric thin films, silicon nitride (SiN x ) has secured significant attention in various application fields including insulating layers in capacitor [1][2][3], gate insulators for thin film transistor [4][5][6], and encapsulation layers on electronic devices [7,8]. While a variety of deposition methods have been employed to deposit silicon nitride, including sputtering [9,10], atomic layer deposition (ALD) [11][12][13], and chemical vapor deposition (CVD) [14,15] the conventional methods still have technical limitations for low temperature encapsulation, whereby sputtering leaves a host of defects, the deposition rate of ALD is too low to be commercialized, and traditional CVD requires high process temperature condition to decompose reactant gases.…”