Interfaced Structures between Halide Perovskites: From Basics to Construction to Optoelectronic Applications

Abstract

The tsunami of research on halide perovskites over the last decade is sparked by the unexpected revelation of their singular properties, creating a new field of perovskite optoelectronics with great achievements. Soon recognized is the importance of perovskite–perovskite (pe–pe) interfaced structures with coherent interfaces on account of the ease with which to tailor perovskite semiconducting properties, and the prospect to inject new functions and boost device performance. There have been prominent developments in the pe–pe interfaced structures concerning their innovative construction strategies, distinctive properties, and interesting optoelectronic applications. This article provides an overview of recent advances on the pe–pe interfaced structures with a view to informing their rational design and guiding the improvement of the derivate devices. It begins with introduction of the structures, energy levels, band alignments, and ion migration pertaining to the pe–pe interfaced structures. Next, five synthetic approaches are systematically presented. Then, theories, simulations, and characterizations of the interfaced structures are discussed. This is followed by highlighting the distinctive applications of the pe–pe interfaced structures in solar cells, detectors, and light‐emitting diodes. Finally, the review is concluded by comprehensively summing up the key points covered and pointing out promising research directions along the line for future endeavors.

Intrinsic defects at the interface of the FAPbI3/MAPbI3 superlattice: insight from first-principles calculations

“…The intrinsic defects are relatively easy to form near the superlattice interfaces, due to that the lattice distortion at the heterogeneous interface induces mismatch and various defects in perovskite–perovskite heterojunctions. 55,56…”

“…The intrinsic defects are relatively easy to form near the superlattice interfaces, due to that the lattice distortion at the heterogeneous interface induces mismatch and various defects in perovskiteperovskite heterojunctions. 55,56 Intrinsic defects in perovskite crystalline materials tend to exist in different charge states, and some charged defects are more likely to generate compared to neutral defects. The calculated formation energies as a function of Fermi level for charged defects are presented in Fig.…”

Fabrication strategies for high quality halide perovskite films in solar cells

“…[6][7][8][9][10][11] Benefiting from the hybrid composition, halide perovskites exhibit excellent properties such as adjustable band gap, high carrier mobility, large optical absorption coefficient, small exciton binding energy, and solution processability. [12][13][14][15][16][17] These properties are crucial to achieve high performance and low cost solar cells.…”

Halide perovskites and high-pressure technologies: a fruitful encounter

“…In addition to natural perovskites, there is a large family of artificial perovskites, including halide perovskites. [5][6][7][8][9][10] At present, halide perovskites are a superstar in this family, due to their supreme optoelectronic properties and low fabrication costs. 4,[11][12][13][14] Their X sites are halogen anions, such as chloride ions (Cl À ), bromide ions (Br À ), and iodide ions (I À ).…”

“…17 Their A site cations could be CH 3 NH 3 + (MA + ), cesium ions (Cs + ), or other organic/inorganic cations with a suitable radius. 7,18 Taking MAPbI 3 as an example, its A site is MA + , B site is Pb 2+ and X site is I − . The Pb and I determine its valence band maximum (VBM) and conduction band minimum (CBM), while the organic cation serves as the carrier pathway.…”