Using additives to adjust the morphology
of perovskite films is
an effective method to improve the power conversion efficiency (PCE)
and long-term stability of CsPbIBr2 perovskite solar cells
(PSCs). In this work, CsPbIBr2 films are modified with
the guanidinium thiocyanate (GuaSCN) additive. After adding GuaSCN
into the precursor of perovskite, the crystal quality of the resulted
perovskite films improved, and the orientations of the (100) and (200)
crystal planes are enhanced obviously. The energy level alignment
is optimized, which is beneficial to the extraction of electrons.
Moreover, the defect density is reduced, and the charge recombination
process is effectively suppressed, thereby improving the solar cell
efficiency and stability. GuaSCN is absent from the resulted perovskite
film due to the high-temperature annealing. Consequently, based on
the GuaSCN additive with a 3% molar ratio in the perovskite precursor
solution, the device yields a champion PCE of 10.90%, with an open-circuit
voltage of 1.23 V, a short-circuit current of 12.05 mA/cm2, and a fill factor of 73.71%, which is 18.7% higher than that of
the counterpart without GuaSCN. The improved CsPbIBr2 PSC
shows better stability. The PCE retains ∼95% of its initial
value compared to only ∼64% for pristine PSCs after being stored
for over 600 h without encapsulation in air. This work provides a
facile strategy for reducing defects and improving the performance
of all-inorganic PSCs.