Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Bonef, Bastien; Haas, Benedikt; Rouvière, J. L.; André, R.; Bougerol, Catherine; Grenier, Adeline; Jouneau, Pierre‐Henri; Zuo, Jian‐Min

doi:10.1111/jmi.12340

Cited by 11 publications

(8 citation statements)

References 21 publications

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“…Published by AIP Publishing. Interfacial strained layers are present in some systems epitaxially grown as InAs/GaSb, 1 InAs/AlSb, 2,3 or ZnTe/ CdSe, 4,5 due to the lack of common atomic species between the two materials. They may affect the electronical and optical properties especially when the active zones are of nanometric size.…”

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confidence: 99%

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Vallet

Claveau

Warot-Fonrose

et al. 2016

Applied Physics Letters

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Spontaneously formed Al-As type interfaces of the InAs/AlSb system grown by molecular beam epitaxy for quantum cascade lasers were investigated by atomic resolution scanning transmission electron microscopy. Experimental strain profiles were compared to those coming from a model structure. High negative out-of-plane strains with the same order of magnitude as perfect Al-As interfaces were observed. The effects of the geometrical phase analysis used for strain determination were evidenced and discussed in the case of abrupt and huge variations of both atomic composition and bond length as observed in these interfaces. Intensity profiles performed on the same images confirmed that changes of chemical composition are the source of high strain fields at interfaces. The results show that spontaneously assembled interfaces are not perfect but extend over 2 or 3 monolayers.

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confidence: 99%

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Vallet

Claveau

Warot-Fonrose

et al. 2016

Applied Physics Letters

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“…Components of strain perpendicular to the incident beam direction may therefore be mapped by tracking the position of Bragg disks as a function of probe position [14]. Strain maps of three path averaged components of the strain tensor in 2D have been reported from a wide range of materials via SED [19,[21][22][23]. Determining the position of the Bragg disks in each diffraction pattern is a critical step, which has been explored in recent literature with cross-correlation based disk finding approaches achieving the best accuracy and precision [24][25][26][27].…”

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confidence: 99%

Scanning electron diffraction tomography of strain

et al. 2020

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Strain engineering is used to obtain desirable materials properties in a range of modern technologies. Direct nanoscale measurement of the three-dimensional strain tensor field within these materials has however been limited by a lack of suitable experimental techniques and data analysis tools. Scanning electron diffraction has emerged as a powerful tool for obtaining two-dimensional maps of strain components perpendicular to the incident electron beam direction. Extension of this method to recover the full three-dimensional strain tensor field has been restricted though by the absence of a formal framework for tensor tomography using such data. Here, we show that it is possible to reconstruct the full non-symmetric strain tensor field as the solution to an ill-posed tensor tomography inverse problem. We then demonstrate the properties of this tomography problem both analytically and computationally, highlighting why incorporating precession to perform scanning precession electron diffraction may be important. We establish a general framework for non-symmetric tensor tomography and demonstrate computationally its applicability for achieving strain tomography with scanning precession electron diffraction data.

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“…However, other challenges arise during the growth of these materials due to the lack of a common anion as well as Cd desorption during the MEE growth of QDs. 12,4 Typically, an unintentional ZnSe interfacial layer (IL) is formed at the interface of the ZnCdSe spacer material and the QDs, causing high tensile strain, modifying the band structure of the resulting materials. This requires adjustments in barrier and QD cadmium concentrations to fabricate stress free devices by strain balancing, 6 complicating growth and increasing potential cost.…”

Section: Introductionmentioning

confidence: 99%

Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells

Deligiannakis

Dhomkar

Claro

et al. 2019

Journal of Crystal Growth

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A new growth process for type-II ZnCdSe/ZnCdTe quantum dots (QDs) is developed to avoid formation of deleterious straininducing ZnSe interfacial layer (IL) that forms during the migration enhanced epitaxy growth process used to form the QDs. This new growth sequence allows for improved control of the interfacial composition and simplifies the fabrication of the intermediate band solar cell device structure based on these QDs, since additional strain balancing schemes are no longer required to grow stress-free structures. In contrast to previous results, lattice-matched QD superlattices were obtained using near lattice-matched ZnCdSe barrier layers. X-ray diffraction and excitation intensity dependent photoluminescence studies were used to support such a conclusion. Our findings have applications for the growth of other heterointerfaces in which an undesirable IL may form due to lack of a common anion, and to desorption and incorporation of competing elements.

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Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

Cited by 11 publications

References 21 publications

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Scanning electron diffraction tomography of strain

Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells

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