Interfacial Chemistry of Oxides on III-V Compound Semiconductors

Milojević, Marko; Hinkle, Christopher L.; Vogel, Eric M.; Wallace, Robert M.

doi:10.1007/978-1-4419-1547-4_6

Cited by 4 publications

(4 citation statements)

References 181 publications

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“…On other surfaces where M -M dimers are not present, M -O-P bonds should dominate. These conclusions are consistent with suggestions from several experiments on InP and GaP oxidation 23,24,26,[66][67][68][69] . However, we should note that for the (100) surface, M -O-M is an exclusively surface-adsorbed topology, whereas M -O-P features oxygen incorporated in the subsurface.…”

Section: Discussionsupporting

confidence: 93%

“…As such, we hesitate to make definitive conclusions about oxide growth beyond the first monolayer based on thermodynamics alone. It is worth emphasizing that kinetics are known to be relevant for oxide growth on III-V semiconductors at ambient temperatures, where conditions far from equilibrium lead to amorphization or formation of metastable compositions that differ from the high-temperature variants 24,26,27,29 . This means that in real samples, lowest-energy oxygen topologies are likely to coexist with the additional topologies we study here.…”

Section: Discussionmentioning

confidence: 99%

“…3), which is a better approximation for the operating conditions within a hydrogenevolving photoelectrochemical cell with an aqueous electrolyte. It is worth emphasizing that oxide films grown at ambient temperatures are commonly far from equilibrium 24 . As such, it is appropriate to include in any analysis not only the lowest-energy structure in Fig.…”

Section: Surface Structure and Energeticsmentioning

confidence: 99%

“…Although dissociative chemisorption of molecular oxygen is known to take place at III-V surfaces at ambient temperature 23 , experiments suggest that different local thermal and electrochemical growth conditions lead to significant variation in the composition and morphology of the resulting native oxide films 9,10,[24][25][26][27][28][29][30] . The discrepancies point to a complex free energy surface featuring competing variants whose expression is determined by a combination of kinetics and thermodynamics.…”

Section: Introductionmentioning

confidence: 99%

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Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Wood

Ogitsu

Schwegler

2012

The Journal of Chemical Physics

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We perform density-functional theory calculations on model surfaces to investigate the interplay between the morphology, electronic structure, and chemistry of oxygen-and hydroxyl-rich surfaces of InP(001) and GaP(001). Four dominant local oxygen topologies are identified based on the coordination environment: M -O-M and M -O-P bridges for the oxygen-decorated surface; and M -[OH]-M bridges and atop M -OH structures for the hydroxyl-decorated surface (M =In,Ga). Unique signatures in the electronic structure are linked to each of the bond topologies, defining a map to structural models that can be used to aid the interpretation of experimental probes of native oxide morphology. The M -O-M bridge can create a trap for hole carriers upon imposition of strain or chemical modification of the bonding environment of the M atoms, which may contribute to the observed photocorrosion of GaP/InP-based electrodes in photoelectrochemical cells. Our results suggest that a simplified model incorporating the dominant local bond topologies within an oxygen adlayer should reproduce the essential chemistry of complex oxygen-rich InP(001) or GaP(001) surfaces, representing a significant advantage from a modeling standpoint.

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Section: Discussionsupporting

confidence: 93%

Section: Discussionmentioning

confidence: 99%

Section: Surface Structure and Energeticsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Wood

Ogitsu

Schwegler

2012

The Journal of Chemical Physics

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Toward the Atomically Abrupt Interfaces of SiO_x/Semiconductor Junctions

Kuzmin

Laukkanen

Mäkelä

et al. 2016

Adv Materials Inter

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In an ideal case, the interface at OSJ is atomically abrupt, meaning that it is only one or few atomic layers thick. In practice, however, OSJs have extended (diffused) interfaces because of the reactivity between their constituents. A strong exothermic reaction often occurs between oxygen and semiconductor, which is diffi cult to avoid during manufacturing of OSJs. Such semiconductor oxidation has been found to cause electronic defect states around the semiconductor bandgap, which degrade the device operation. Therefore, the semiconductor oxidation has attracted great scientifi c and technological interest. Besides, there might be the second serious problem in the development of OSJs. Recent computational studies have shown that the interaction of the second (nonoxygen) element with semiconductor can play an essential role in formation of OSJs. [ 20,21 ] Thus, the problem can be twofold: how to avoid (or minimize) the harmful reaction of semiconductor crystal with each of elements (oxygen and nonoxygen) at OSJ systems.Here we present an experimental evidence for the twofold problem, and suggest a method to overcome it. We have investigated OSJs that contain the prototypical SiO 2 or SiO x N y fi lm on GaInAs(100), GaAs(100), and Ge(100) semiconductors by means of photoluminescence (PL), capacitance-voltage ( C -V ), and synchrotron-radiation photoelectron spectroscopy (PES) measurements. The results clearly indicate a harmful effect of substrate interaction with silicon. For this reason, we have developed a simple approach to control the detrimental semiconductor surface reactivity at OSJs.In the beginning, we have investigated the III-V semiconductor interaction with silicon by means of PL measurements where the PL intensity is sensitive to the density of bandgap defects at the interface. PL emission was measured at room temperature (RT) (all other measurements described below were performed at RT as well) by using Nd:YAG laser ( λ exc = 532 nm) and InGaAs photodetector array or Avantes AvaSpec-2084×14 CCD spectrometer. The GaInAs substrates were grown on InP(100) by molecular beam epitaxy. A protective arsenic cap layer was removed by heating at 400 °C in the ultra-high vacuum (UHV). Then, a 1-2 nm thick Si layer was in situ deposited on the clean GaInAs(100)(4×2) surface, and afterward the Si-covered GaInAs sample was exposed to NH 3 gas at 300-400 °C to form SiN x . After the nitridation, Si 2p, Si 2s, and N 1s core-level photoemissions were verifi ed from the resulting SiN x /GaInAs(100) by X-ray photoelectron spectroscopy. Finally, a 3 nm thick Al 2 O 3 fi lm was grown on top of SiN x /GaInAs(100) Semiconductor devices, such as transistors, solar cells, LEDs, laser diodes, and sensors usually consist of a stack of an oxide fi lm and a semiconductor crystal even though the oxide fi lm is not grown on purpose (semiconductor surface parts become at least oxidized during the component manufacturing). [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] One of the most well-known device examples ...

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A Novel Fin-Shape Double-Gate GaAs p-MOSFET With Intrinsic Source and Enhanced Switching Performance

Cherik,

Mohammadi

2024

IEEE Trans. Dielect. Electr. Insul.

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Interfacial Chemistry of Oxides on III-V Compound Semiconductors

Cited by 4 publications

References 181 publications

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Toward the Atomically Abrupt Interfaces of SiO_x/Semiconductor Junctions

A Novel Fin-Shape Double-Gate GaAs p-MOSFET With Intrinsic Source and Enhanced Switching Performance

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Interfacial Chemistry of Oxides on III-V Compound Semiconductors

Cited by 4 publications

References 181 publications

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Local structural models of complex oxygen- and hydroxyl-rich GaP/InP(001) surfaces

Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions

A Novel Fin-Shape Double-Gate GaAs p-MOSFET With Intrinsic Source and Enhanced Switching Performance

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Toward the Atomically Abrupt Interfaces of SiO_x/Semiconductor Junctions