Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

Li, Meicheng; Zhao, Liancheng; Chen, Xue-kang

doi:10.1016/s0169-4332(03)00679-2

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…Because detecting UVC requires wide bandgap semiconductors as the photosensitive layer, UVC PDs are mainly made from ultra-wide bandgap semiconductors (UWBG), such as gallium oxide (Ga 2 O 3 ), aluminum nitride (AlN), boron nitride (BN), and magnesium-doped zinc oxide (MgZnO) [1,[9][10][11][12]. However, the fabrications of UVC PDs using the above UWBG materials all require complex fabrication processes with a high temperature, such as chemical vapor deposition (CVD) [11,13] and molecular beam epitaxy (MBE) [14]. Thus, a UWBG functional material based on a low-temperature process is highly required.…”

Section: Introductionmentioning

confidence: 99%

A UVC photodetector based on Mg-doped ZnO film

Ren,

Zhai,

Song

2024

Preprint

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The solar-blind ultraviolet (UV) photodetector (PD) can find extensive applications in fire prevention, ozone hole monitoring, navigation, and more, for the advantage of no solar background radiation in the UVC band (200-280 nm) at the earth's surface. However, most of the UVC PDs reported in recent years, including gallium oxide PDs, zinc oxide-based PDs, and aluminum nitride PDs, suffer from the complex and costive fabrication process, which requires high-temperature material fabrication and high fabrication costs. Here, we report a UVC PD composed of magnesium-doped zinc oxide (MgZnO) photosensitive functional material via a simple low-temperature sol-gel fabrication method. In the study, firstly, the synthesizing method of the MgZnO photosensitive functional layer is systematically investigated. Then, the optical bandgap change of MgZnO with the doped Mg concentrations is explored. The physical model of the relationship between the Mg-doped concentrations and the optical bandgap of the MgZnO photosensitive functional layer is established by spectroscopic methods. Based on the doping study, a highly responsive MgZnO UVC PD has been designed and fabricated. The MgZnO UVC PD shows a response bandwidth of 200 nm-280 nm, a high responsivity of 108 mA/W, and rise and fall times as low as 0.4 s and 2.4 s, respectively. The work reported here may open an easy, low-cost route for developing UVC PDs.

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Section: Introductionmentioning

confidence: 99%

A UVC photodetector based on Mg-doped ZnO film

Ren,

Zhai,

Song

2024

Preprint

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Ultraviolet photodetector based on magnesium-doped zinc oxide film with tunable bandgap

Ren,

Zhai,

Song

2024

Opt. Eng.

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The solar-blind ultraviolet photodetector can find extensive applications in fire prevention, ozone hole monitoring, navigation, and more, for the advantage of no solar background radiation in the ultraviolet-c band (UVC, 200 to 280 nm) at the Earth's surface. However, most of the UVC photodetectors reported in recent years, including gallium oxide photodetectors, zinc oxide-based photodetectors, and aluminum nitride photodetectors, suffer from the complex and costive fabrication process, which requires high-temperature material fabrication and high fabrication costs. Here, we report an ultraviolet (UV) photodetector composed of magnesium-doped zinc oxide (MgZnO) photosensitive functional material via a simple low-temperature sol-gel fabrication method. In the study, first, the synthesizing method of the MgZnO photosensitive functional layer is systematically investigated. Then, the optical bandgap change of MgZnO with the doped Mg concentrations is explored. The physical model of the relationship between the Mg-doped concentrations and the optical bandgap of the MgZnO photosensitive functional layer is established by spectroscopic methods. Based on the doping study, a highly responsive MgZnO UV photodetector has been designed and fabricated. The MgZnO UV photodetector shows a response bandwidth of 200 to 280 nm, a high responsivity of 108 mA/W, and rise and fall times as low as 0.4 and 2.4 s, respectively. The work reported here may open an easy, low-cost route for developing UV photodetectors.

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Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

Cited by 2 publications

References 13 publications

A UVC photodetector based on Mg-doped ZnO film

A UVC photodetector based on Mg-doped ZnO film

Ultraviolet photodetector based on magnesium-doped zinc oxide film with tunable bandgap

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