Physics of Organic Semiconductors 2012
DOI: 10.1002/9783527654949.ch4
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Interfacial Doping for Efficient Charge Injection in Organic Semiconductors

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Cited by 5 publications
(5 citation statements)
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“…Clustering of dopant molecules was observed for transition metal oxides, 30,55,58 and it was argued that the doping efficiency is given by a product of the dispersion efficiency and the efficiency of forming the dopant/ matrix pair to form a charge transfer complex. 62,63 Furthermore, the doping efficiency can be limited by intrinsic charge carrier traps as discussed above, 46,52 or, as discussed above as well, the large dopant activation energy 63 caused by either strong Coulomb interaction 35,36 or a strong hybridization of dopant and matrix molecule. 40 Another explanation adding to the limited doping efficiency was proposed recently.…”
Section: Doping Efficiencymentioning
confidence: 99%
“…Clustering of dopant molecules was observed for transition metal oxides, 30,55,58 and it was argued that the doping efficiency is given by a product of the dispersion efficiency and the efficiency of forming the dopant/ matrix pair to form a charge transfer complex. 62,63 Furthermore, the doping efficiency can be limited by intrinsic charge carrier traps as discussed above, 46,52 or, as discussed above as well, the large dopant activation energy 63 caused by either strong Coulomb interaction 35,36 or a strong hybridization of dopant and matrix molecule. 40 Another explanation adding to the limited doping efficiency was proposed recently.…”
Section: Doping Efficiencymentioning
confidence: 99%
“…Despite their hazardous reactivity and diffusivity, highly reactive metals are still widely employed today to facilitate efficient n-doping and ensure desirable device performance towards commercial application 10 12 . Although air-stable alkali salt precursors (e.g., Cs 2 CO 3 13 and Rb 2 CO 3 14 ) that can liberate alkali metals during the fabrication process have been exploited to address this issue, the resulting n-doping process always suffers from undesired outgassing and metal diffusion. Air-stable, vacuum-deposited, byproduct-free and widely applicable n-doping strategies remain vigorously ongoing pursuit until now 15 , 16 .…”
Section: Introductionmentioning
confidence: 99%
“…It is only when it meets the substrate that it can transfer electronic charge and become a cation. This is a particular case of doping different from the classical molecular doping, [64][65][66] where acceptor or donor molecules are inserted into the organic semiconductor host. A significant difference with molecular doping is the absence of negatively charged recombination centers in the film itself.…”
Section: Electron Energy Level Scheme Of the Ito/dipo-ph 4 Interfacementioning
confidence: 99%