Interfacial effects on resistive switching of vacuum spray deposited polymer thin films embedded with TiO2 nanoparticles under bending strain

Li, Jian‐Chang; Sui, Wen; Li, Yue

doi:10.1016/j.orgel.2018.05.042

Cited by 5 publications

(9 citation statements)

References 44 publications

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“…However, when the device was cooled to 0 °C, the slope 2 only shows a downward trend, and the SCLC region even disappears after bending 5000 times (see Figure b). Similar behavior was observed in our previous study in which cyclic mechanical stress diminished the density of effective traps . Eventually, the SCLC only can be observed for the unbent device at −40 °C (see Figure c).…”

Section: Results and Discussionsupporting

confidence: 89%

“…Notably, as shown in Figure d, with increasing bending cycles at a radius of 10 mm, the ON/OFF ratios decreased almost linearly, while the threshold voltages exhibited slight fluctuations. As detailed in our previous study, this may be related to the polymer–NP interface debond caused by the mechanical fatigue . The error bars are the standard deviation of 30 measurements.…”

Section: Results and Discussionmentioning

confidence: 68%

“…Poor mechanical stability was also present in poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2- b ]thiophene]-based devices after 10 4 bending cycles, and Sekine et al attributed this to the interruption between the electrode and the function layer . We previously observed similar deterioration of switching performance for poly(9,9-di-octylfluorene- alt -benzothiadiazole) (PFBT)–TiO 2 /ITO/PET devices after bending 2000 times because of microcrack initiation and propagation along the polymer/NP interface . Lee et al and Wang et al believed that the NPs embedded in polymer film can be considered as microstructural defects, which can enhance electrical performance but lower the fatigue endurance of the devices. , …”

Section: Introductionmentioning

confidence: 64%

“…As detailed in our previous study, this may be related to the polymer−NP interface debond caused by the mechanical fatigue. 14 The error bars are the standard deviation of 30 measurements. The error source may be due to the environment effects and measurement uncertainties of the CS35011 potentiostat.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…13 We previously observed similar deterioration of switching performance for poly(9,9-di-octylfluorene-alt-benzothiadiazole) (PFBT)−TiO 2 /ITO/PET devices after bending 2000 times because of microcrack initiation and propagation along the polymer/NP interface. 14 Lee et al and Wang et al believed that the NPs embedded in polymer film can be considered as microstructural defects, which can enhance electrical performance but lower the fatigue endurance of the devices. 15 Kumar et al reported that the internal boron particles decreased the mechanical fatigue endurance of Ti-55511 alloys at a high temperature of 1123 K by limiting the grain boundary sliding.…”

Section: ■ Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Temperature-Dependent Fatigue Failure of Flexible Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (PFBT)–ZnO Nanoparticle Hybrid Resistive Switching Memory Devices

Sui

2020

J. Phys. Chem. C

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Polymer–nanoparticle (NP) hybrid nanocomposites act as essential elements for ultraflexible memory devices due to their processability, flexibility, and chemical resistance. However, a key limitation to their potential is associated with their mechanical reliability with the variation of temperature, which is still poorly understood. Herein, we systematically investigated the temperature-dependent fatigue failure of the Al/poly(9,9-dioctylfluorene-alt-benzothiadiazole)–ZnO/Al/PET device, in which an 80% reduction in the fatigue lifetime of the device was observed as the temperature decreased from 40 to −40 °C. The finite element analysis results and theoretical calculations indicated that polymer/NP interfaces play different roles in crack propagations at different temperatures. At relatively high temperature, the elastic mismatch at the polymer/NP interface allows it to alleviate the crack propagation encountered with repetitive mechanical stress. However, this behavior is suppressed by the significant decrease of the polymer critical strain induced by the segmental motion in the polymer backbone at low temperature. In this case, large stiffness mismatch at the polymer/NP interface accelerates the crack propagation, which will inhibit electron transfer and eventually lead to device breakdown. This study may pave the way for future realization of ultraflexible hybrid memory devices utilized in harsh environments.

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Section: Results and Discussionsupporting

confidence: 89%

Section: Results and Discussionmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 64%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Temperature-Dependent Fatigue Failure of Flexible Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (PFBT)–ZnO Nanoparticle Hybrid Resistive Switching Memory Devices

Sui

2020

J. Phys. Chem. C

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Electrochemical preparation of polypyrrole-Ag nanoparticles composite film and its resistive switching properties

Wang

Deng²,

Chen³

et al. 2022

Journal of Alloys and Compounds

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Bending effect on the synaptic behavior of WO3-based flexible memristor under variable temperatures

Yang

2022

Applied Physics Letters

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We systematically study the fatigue failure of the Ag/Poly (3-hexylthiophene-2,5-diyl)(P3HT)/WO3/ITO/PET flexible memristor under variable temperatures, which simulates essential synaptic learning functions. The theoretical calculations and finite element analysis results indicate that the P3HT/WO3 interface plays a key role in device fatigue failure at variable temperatures. As the temperature dropped from 100 to −30 °C, a significant decrease in the loosely adsorbed polymer chains and flattened chains occurs at the P3HT/WO3 interface and thus leads to the deterioration of the P3HT/WO3 interface. The weak P3HT/WO3 interfacial bonding substantially accelerates the crack propagation under low-temperature flexural cycles, which will ultimately cause the device to deteriorate. Our work may provide some useful information for future achievement of flexible memory synapses utilized in cryogenic environments.

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Interfacial effects on resistive switching of vacuum spray deposited polymer thin films embedded with TiO2 nanoparticles under bending strain

Cited by 5 publications

References 44 publications

Temperature-Dependent Fatigue Failure of Flexible Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (PFBT)–ZnO Nanoparticle Hybrid Resistive Switching Memory Devices

Temperature-Dependent Fatigue Failure of Flexible Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (PFBT)–ZnO Nanoparticle Hybrid Resistive Switching Memory Devices

Electrochemical preparation of polypyrrole-Ag nanoparticles composite film and its resistive switching properties

Bending effect on the synaptic behavior of WO3-based flexible memristor under variable temperatures

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