2022
DOI: 10.1016/j.solener.2022.11.014
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Interfacial engineering of sputtered NiOx for enhancing efficiency and stability of inverted perovskite solar cells

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Cited by 9 publications
(5 citation statements)
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“…In the most advanced studies, self-assembled monolayers (SAMs) and C 60 have been widely used as the hole transport layer (HTL) and electron transport layer (ETL), respectively, and have achieved remarkable PCEs. [35][36][37][38][39][40][41] Surface passivation is necessary to reduce the surface defects and improve the heterojunction contact properties of perovskites. [42,43] In this study, DMI was used as a passivation material (molecular formula see Figure S12, Supporting Information) to postprocess the surfaces of the SC perovskite films.…”
Section: Resultsmentioning
confidence: 99%
“…In the most advanced studies, self-assembled monolayers (SAMs) and C 60 have been widely used as the hole transport layer (HTL) and electron transport layer (ETL), respectively, and have achieved remarkable PCEs. [35][36][37][38][39][40][41] Surface passivation is necessary to reduce the surface defects and improve the heterojunction contact properties of perovskites. [42,43] In this study, DMI was used as a passivation material (molecular formula see Figure S12, Supporting Information) to postprocess the surfaces of the SC perovskite films.…”
Section: Resultsmentioning
confidence: 99%
“…In 2013, Malinkiewicz et al inserted an interlayer between the HTL and perovskite layers to improve charge recombination at the interface between perovskite and PEDOT:PSS . After this, organic materials, inorganic materials, and SAMs have been tried as interlayers to optimize the interface between perovskite/HTL for more efficient hole transfer and better interfacial contact. ,, In recent years, low-cost, thermally, and chemically stable inorganic nickel oxide (NiO x ) is one of the popular choices of hole-transfer layer materials for high-performance p-i-n PSCs. Also, NiO x -based IPSCs are highly compatible for the development of flexible or tandem solar cells. Nevertheless, high-valence Ni and active hydroxyl groups can decompose perovskite, leading to a hole extraction barrier at the NiO x /perovskite interface.…”
Section: The Interface Engineering Of Perovskite/htl Interfacementioning
confidence: 99%
“…[2,[11][12][13][14] Among them, non-stoichiometric NiO x , as a wide band gap (3.6-4.0 eV) p-type semiconductor material, has become an important research object for high-performance fPSCs due to appropriate work function, various preparation methods, high hole mobility, and excellent thermal stability. [3,4,[15][16][17][18] Among them, nanocrystalline NiO x (n-NiO x ) materials prepared by the coprecipitation method have attracted more attention owing to their higher carrier mobility and low cost. [19][20][21] N-NiO x is a non-stoichiometric oxide with nickel vacancies to realize the p-type doping.…”
Section: Introductionmentioning
confidence: 99%