Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar <i>m‐</i>Plane GaN Vertical <i>p–n</i> Diodes

Aragon, Andrew; Monavarian, Morteza; Stricklin, Isaac; Pickrell, Gregory; Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Feezell, Daniel

doi:10.1002/pssa.201900757

Cited by 16 publications

(7 citation statements)

References 24 publications

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“…Observations of Si contaminants and other impurities on the surface of GaN have been reported by numerous investigators. The presence of Si on GaN was detected after exposure to the laboratory environment, after wet chemical etching, after plasma-based dry etching, ,,− and even during in situ MOCVD processes involving Si-containing reactor parts. , To elucidate and quantify various mechanisms of Si contamination, we treated the as-grown GaN epilayers with different processes that could potentially introduce Si. Afterward, we performed regrowth of GaN on the treated surfaces and studied the concentration and profile of Si impurities at the (now) buried interfaces.…”

Section: Resultsmentioning

confidence: 99%

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

Wang

Nami

et al. 2021

ACS Appl. Mater. Interfaces

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The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for epitaxial selective area doping, which in turn is needed for the formation of lateral PN junctions and advanced device architectures. In this work, we report the electrical properties of etched-and-regrown GaN PN diodes using an in situ Cl-based precursor, tertiary butylchloride (TBCl). We demonstrated a regrowth diode with I−V characteristics approaching that from a continuously grown reference diode. The sources of unintentional contamination from the silicon (Si) impurity and the mediating effect of Si during the TBCl etching are also investigated in this study. This work points to the potential of in situ TBCl etching toward the realization of GaN lateral PN junctions.

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Section: Resultsmentioning

confidence: 99%

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

Wang

Nami

et al. 2021

ACS Appl. Mater. Interfaces

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“…The origin of the leakage current in these regrown nonplanar p-GaN structures has been recently revealed [105], as being related to the n + -type interfacial impurities (e.g. Si, O, C) introduced in the regrowth process [106][107][108][109][110][111][112].…”

Section: Vertical Power Finfetsmentioning

confidence: 99%

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Zhang

Zubair

Liu

et al. 2021

Semicond. Sci. Technol.

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Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-frequency (RF) applications. While commercial GaN devices are increasingly being adopted in data centers, electric vehicles, consumer electronics, telecom and defense applications, their performance is still far from the intrinsic GaN limit. In the last few years, the fin field-effect transistor (FinFET) and trigate architectures have been leveraged to develop a new generation of GaN power and RF devices, which have continuously advanced the state-of-the-art in the area of microwave and power electronics. Very different from Si digital FinFET devices, GaN FinFETs have allowed for numerous structural innovations based on engineering the two-dimensional-electron gas or p–n junctions, in both lateral and vertical architectures. The superior gate controllability in these fin-based GaN devices has not only allowed higher current on/off ratio, steeper threshold swing, and suppression of short-channel effects, but also enhancement-mode operation, on-resistance reduction, current collapse alleviation, linearity improvement, higher operating frequency, and enhanced thermal management. Several GaN FinFET and trigate device technologies are close to commercialization. This review paper presents a global overview of the reported GaN FinFET and trigate device technologies for RF and power applications, as well as provides in-depth analyses correlating device design parameters to device performance space. The paper concludes with a summary of current challenges and exciting research opportunities in this very dynamic research field.

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“…For example, the high density of Si is detrimental to the power devices and causes field crowding and premature breakdown when the p-n junction is located near the regrowth interface because Si is an n-type dopant in GaN. However, a moderate Si concentration (lower than 5 × 10 17 cm −3 ) is benign to the device leakage current and breakdown voltage [37]. Several groups have attempted to alleviate or remove ICP-induced damage using thermal annealing, wet chemical treatment, and low-power etching.…”

Section: Etching Damage and Materials Characterizationmentioning

confidence: 99%

Selective area doping of GaN toward high-power applications

Ferreyra

Wang

et al. 2023

J. Phys. D: Appl. Phys.

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Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors (CAVETs), junction termination extensions (JTEs), junction barrier Schottky (JBS) diodes, junction field-effect transistors (JFETs), vertical-channel junction FETs (VC-JFETs), U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

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Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐Plane GaN Vertical p–n Diodes

Abstract: This is the author manuscript accepted for publication and has undergone full peer review but has not been through the copyediting, typesetting, pagination and proofreading process, which may lead to differences between this version and the Version of Record. Please cite this article as

Cited by 16 publications

References 24 publications

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

GaN FinFETs and trigate devices for power and RF applications: review and perspective

Selective area doping of GaN toward high-power applications

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