2021
DOI: 10.1016/j.corsci.2021.109604
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Interfacial oxidation of hafnium modified NiAl alloys

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Cited by 11 publications
(1 citation statement)
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“…Semiconductor materials, like CdS, NiO, TiO2, ZnS and ZnO, have been utilized as photocatalysts [18]. The interfacial properties of the semiconductor bulk could be modified by semiconductor oxides prepared using the impregnation method of supporting oxides with a precursor compound [19]. The doping of the semiconductor metal is generally used to alter and improve the interfacial surface of the substrate material, improving the photocatalytic degradation reaction.…”
Section: Introductionmentioning
confidence: 99%
“…Semiconductor materials, like CdS, NiO, TiO2, ZnS and ZnO, have been utilized as photocatalysts [18]. The interfacial properties of the semiconductor bulk could be modified by semiconductor oxides prepared using the impregnation method of supporting oxides with a precursor compound [19]. The doping of the semiconductor metal is generally used to alter and improve the interfacial surface of the substrate material, improving the photocatalytic degradation reaction.…”
Section: Introductionmentioning
confidence: 99%