Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

Xiong, Chao; Jin, Xiao; Chen, Lei; Du, Weijie; Xu, Wei-Long; Hou, Dongdong

doi:10.1088/1674-4926/39/12/124013

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…The electron affinity energies (E C and E V ) of these materials are calculated based on previously published experimental results [40]. E g for CuI and ZnO are obtained in this work.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Yang,

Li,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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Copper iodide (CuI) is an intrinsically transparent p-type semiconductor with a wide band gap of about 3.1 eV. In this work, Cu3N films were prepared as precursors through high-power impulse magnetron sputtering and then were solid-phase iodinated at room temperature for the preparation of transparent CuI films. Subsequently, transparent p-CuI/n-ZnO heterojunctions were fabricated wherein ZnO layers were deposited by radio frequency magnetron sputtering. After the properties are optimized by annealing, the heterojunctions exhibit significant rectification characteristics. The influence of annealing temperature on the electrical properties of the heterojunctions have been investigated. The optimal ideality factor of about 1.22 can be obtained with a rectification ratio of 1.05 × 105 after the heterojunctions annealing at 100 °C. This value is superior to most of the results reported in the literature. Meanwhile, the light-to-dark current ratio and the transmittance in the visible region of the heterojunction have also been studied. The light-to-dark current ratio is significant at 6.42 × 106. The average transmittance of the heterojunctions is 72.7%. These findings demonstrate the potential applications of CuI for optoelectronic devices and the promising prospects of p-CuI/n-ZnO heterojunction-based photodetectors and other optoelectronic devices.

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“…The electron affinity energies (E C and E V ) of these materials are calculated based on previously published experimental results [40]. E g for CuI and ZnO are obtained in this work.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Yang,

Li,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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show abstract

“…The use of new materials in data storage devices, memory and solar cells is another area of current research. Studies that present the characteristics of new analog memories using gold/zinc dioxide/indium tin oxide (Au/ZnO/ITO) [123] devices, or the analysis of the electron affinity optimization and the band gap of a ZnO/Si [124] heterojunction solar cell. Even though all the devices in development have a higher cost, they are attracting great technological interest [125].…”

Section: Community Analysismentioning

confidence: 99%

Electronics and Its Worldwide Research

et al. 2020

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The contributions of researchers at a global level in the journal Electronics in the period 2012–2020 are analyzed. The objective of this work is to establish a global vision of the issues published in the Electronic magazine and their importance, advances and developments that have been particularly relevant for subsequent research. The magazine has 15 thematic sections and a general one, with the programming of 385 special issues for 2020–2021. Using the Scopus database and bibliometric techniques, 2310 documents are obtained and distributed in 14 thematic communities. The communities that contribute to the greatest number of works are Power Electronics (20.13%), Embedded Computer Systems (13.59%) and Internet of Things and Machine Learning Systems (8.11%). A study of the publications by authors, affiliations, countries as well as the H index was undertaken. The 7561 authors analyzed are distributed in 87 countries, with China being the country of the majority (2407 authors), followed by South Korea (763 authors). The H-index of most authors (75.89%) ranges from 0 to 9, where the authors with the highest H-Index are from the United States, Denmark, Italy and India. The main publication format is the article (92.16%) and the review (5.84%). The magazine publishes topics in continuous development that will be further investigated and published in the near future in fields as varied as the transport sector, energy systems, the development of new broadband semiconductors, new modulation and control techniques, and more.

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Effects of interfacial layer on the electrical properties of n-ZnO/p-Si heterojunction diodes between 260 and 340 K

Kaya¹,

Yılmaz

2019

J Mater Sci: Mater Electron

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Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

Cited by 5 publications

References 21 publications

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Electronics and Its Worldwide Research

Effects of interfacial layer on the electrical properties of n-ZnO/p-Si heterojunction diodes between 260 and 340 K

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