Interfacial Permittivity Characterization of Heterogeneous Dielectric Bi-Layers

Current Density-Voltage (J-V) Characterization of Monolithic Nanolaminate Capacitors

“…This suggests that leakage is primarily dominated by the bulk oxide between the electrodes, and consequently, the Si 3 N 4 /SiO 2 interface has minimal impact on device leakage. This experimental result holds significance since prior research in [14] identified the interfacial permittivity to be very high (k Si 3 N 4 /SiO 2 ∼ 1419). Therefore, this finding strongly suggests that the Si 3 N 4 /SiO 2 material combination may be a feasible candidate for future device designs.…”

“…This suggests that the heterogeneous Al 2 O 3 /SiO 2 structure features a relatively low-leakage interface. Such low leakage, coupled with the high interfacial permittivity (k Al 2 O 3 /SiO 2 ∼ 2373 [14]), provides strong encouragement for incorporating this Al 2 O 3 /SiO 2 interface into future energy storage devices. However, there is an interface that appears to exacerbate leakage current.…”

“…This model, which was simulated using COMSOL Multiphysics ® (COMSOL, Inc., Stockholm, Sweden), consists of 18 alternating layers of 5 nm SiO 2 (k SiO 2 = 4.3) and Al 2 O 3 (k Al 2 O 3 = 9.9), with a 1 nm high-k interfacial layer (k Al 2 O 3 /SiO 2 = 2373), placed between capacitor electrodes with a spacing of 200 nm. The value of the interfacial high-k and the model itself have been extracted from experimental data described in [14,15]. The maximum storage voltage V max for the MNES PPE configuration shown in Figure 5 can be calculated using:…”