2015
DOI: 10.1021/acsami.5b04840
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Interfacial Properties of Organic Semiconductor–Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition

Abstract: We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high c… Show more

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Cited by 13 publications
(7 citation statements)
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“…Pentacene films PLD-deposited on preheated substrates (403 K) and thermally evaporated films have demonstrated improved morphology and decreased surface roughness, compared to films prepared on room temperature substrates, corresponding to μ values obtained for OFET devices of 10 −4 and 3 × 10 −2 cm 2 V −1 s −1 , respectively. In PLD-deposited RB films on SiO 2 and La 0.67 Sr 0.33 MnO 3 (LSMO), the X-ray diffraction (XRD) patterns revealed the presence of crystalline orthorhombic RB and a dominating amorphous phase [ 4 , 36 ], in agreement with carrier mobility values of ~10 − 6 cm 2 V − 1 ∙s − 1 , that corresponds to previous reports [ 37 ].…”
Section: Introductionsupporting
confidence: 87%
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“…Pentacene films PLD-deposited on preheated substrates (403 K) and thermally evaporated films have demonstrated improved morphology and decreased surface roughness, compared to films prepared on room temperature substrates, corresponding to μ values obtained for OFET devices of 10 −4 and 3 × 10 −2 cm 2 V −1 s −1 , respectively. In PLD-deposited RB films on SiO 2 and La 0.67 Sr 0.33 MnO 3 (LSMO), the X-ray diffraction (XRD) patterns revealed the presence of crystalline orthorhombic RB and a dominating amorphous phase [ 4 , 36 ], in agreement with carrier mobility values of ~10 − 6 cm 2 V − 1 ∙s − 1 , that corresponds to previous reports [ 37 ].…”
Section: Introductionsupporting
confidence: 87%
“…The majority of μ values in Table S1 are between10 −2 and 10 −1 cm 2 V −1 s −1 ; these values for RB films deposited by MAPLE are several orders of magnitude higher than those reported for the amorphous material (~10 −6 cm 2 V −1 s −1 ) [ 37 ] and the PLD-deposited RB films [ 4 , 36 ], approaching the technologically accepted level of 1 cm 2 V −1 s −1 ( Figure 6 c). This improvement in mobility can be attributed to the higher amount of orthorhombic crystalline phase of the MAPLE deposited RB films and better connectivity between the crystallites of rubrene compared to films deposited by other evaporation techniques.…”
Section: Resultsmentioning
confidence: 99%
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“…For each type, there are several techniques applied. Physical deposition techniques for thin organic films include physical vapor deposition (PVD) [38][39][40][41][42], organic vapor phase deposition (OVPD) [43][44][45], organic molecular beam deposition (OMBD) [46][47][48][49][50][51], solvent vapor annealing (SVA) [52][53][54][55][56], self-assembled monolayers (SAMs) [57,58], inkjet printing [59,60], pulsed laser deposition (PDL) [61][62][63][64], and laser evaporation [65][66][67] techniques. The chemical methods include solution techniques and gas-phase deposition methods.…”
Section: Introductionmentioning
confidence: 99%