Interfacial reactions of electroless nickel thin films on silicon

Liu, C.M.; Liu, W.L.; Hsieh, S.H.; Tsai, Tsung-Yen; Chen, W.J.

doi:10.1016/j.apsusc.2004.09.110

Cited by 44 publications

(20 citation statements)

References 14 publications

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“…A similar finding was obtained from the electroless Ni/Si thin film. 18 The cross-sectional TEM images indicate that tiny pyramid-like Cu 3 Si structures nucleate by the {111} closely-packed planes at the Si/Ta x Ni 1-x interface, but the barrier layer retains flat. Therefore, the formation of Cu 3 Si may drive the formation of Ni-silicide at the Si/Ta x Ni 1-x interface because the Cu 3 Si phase initially nucleates at the interface.…”

Section: Discussionmentioning

confidence: 98%

Barrier Properties of Amorphous Binary Ta-Ni Thin Films for Cu Interconnection

Fang

Hsu

Chen

2007

Journal of Elec Materi

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Highly thermally stable amorphous Ta x Ni 1-x (x = 0.25 and 0.75) thin films were deposited on Si and Si/SiO 2 substrate by magnetron dc sputtering, and the performance of films (20-nm thick) as barriers for copper (Cu) interconnection was evaluated. The failure behaviors of the films were elucidated using a four-point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Auger emission spectrometry (AES). A highly (111) textured Cu film could be obtained when Cu was deposited on Si/Ta 0.25 Ni 0.75 and Si/SiO 2 /Ta 0.25 Ni 0.75 substrates. The failure temperatures of Si/Ta 0.25 Ni 0.75 /Cu-and Si/Ta 0.75 Ni 0.25 /Cu-stacked films were 550°C and 600°C, respectively. Failure of the studied films initiated the penetration of Cu into the Si/Ta x Ni 1-x interface and triggered the partial dissociation of the Ta x Ni 1-x barrier layer, forming Cu 3 Si precipitates, Ni-silicide and Ta-silicide. Increasing the Ta content enhanced the microstructural and thermal stability of the stacked films, markedly improving barrier properties. The experimental findings demonstrated that the barrier characteristic of Ta 0.75 Ni 0.25 was substantially superior to that of Ta 0.25 Ni 0.75 .

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Section: Discussionmentioning

confidence: 98%

Barrier Properties of Amorphous Binary Ta-Ni Thin Films for Cu Interconnection

Fang

Hsu

Chen

2007

Journal of Elec Materi

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“…Ni is widely used for forming silicide due to its ease of availability and lower cost. Moreover, nickel silicide (NiSi) can be formed at temperatures starting from 250 1C to higher temperatures of 500 1C as reported [13][14][15][16]. Contact resistivity as low as 0.01 mO cm 2 is reported for metal-semiconductor contacts formed using NiSi [17].…”

Section: Introductionmentioning

confidence: 87%

A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells

Chaudhari

Solanki

2010

Solar Energy Materials and Solar Cells

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“…For example, Hayzelden et al [17] reported that NiSi 2 precipitates were observed in situ to migrate though the a-Si leaving a trail of crystalline Si formed on {111} faces of the octahedral NiSi 2 precipitates with a coherent interface, and the growth rate of the crystalline Si was limited by diffusion through the NiSi 2 precipitates. Liu et al further observed that the presence of P in the electroless Ni films resulted in a thin layer of Ni 3 P between Ni and Si [16]. This stable Ni 3 P phase reduced the supply of Ni atoms through the electroless Ni/Si interface and thus promoted the formation of disilicide NiSi 2 , instead of monosilicide (NiSi), at low temperature.…”

Section: Methodsmentioning

confidence: 99%

“…We also tried to deposit pure Ni dots by replacing the reducing agent NaH 2 PO 2 with N 2 H 4 . It has been reported that the presence of phosphorous can promote the formation of disilicide NiSi 2 at low temperature [16], which helps the crystallization of a-Si because the disilicide precipitates act as nucleation sites and crystallization proceeds via the migration of precipitates through a-Si [17]. For example, Hayzelden et al [17] reported that NiSi 2 precipitates were observed in situ to migrate though the a-Si leaving a trail of crystalline Si formed on {111} faces of the octahedral NiSi 2 precipitates with a coherent interface, and the growth rate of the crystalline Si was limited by diffusion through the NiSi 2 precipitates.…”

Section: Methodsmentioning

confidence: 99%