Interfacial reactions on annealing molybdenum-silicon multilayers

Holloway, Karen; Ba, Khiem; Sinclair, Robert

doi:10.1063/1.343425

Cited by 156 publications

(65 citation statements)

References 29 publications

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“…The fractional change in bilayer spacing is graphically illustrated in Fig. 1 along with the data of Stearns et al [ 1] and Holloway et al [2]. The contraction trends of this study are qualitatively consistent with those of the earlier work.…”

supporting

confidence: 80%

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<title>Thermal stability of Mo/Si multilayers</title>

et al. 1992

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supporting

confidence: 80%

“…Consequently, it is believed important to assess the structural stability of these mirrors. Relatively recent work by the authors and other investigators assessed the stability of Mo/Si multilayers [1][2][3][4][5]. Most of these works emphasized temperatures above 400°C and relatively short annealing times.…”

Section: Introductionmentioning

confidence: 99%

<title>Thermal stability of Mo/Si multilayers</title>

et al. 1992

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“…The temperature at which the reflectivity of the first order Bragg peaks break down for these mirrors are lower than the baking temperature for our mirrors, which were e--beam deposited and thermally treated during deposition. In the literature activation energies E a for diffusion were deduced by means of an Arrheniusplot of the multilayer d-spacing ln(Ad) 2 versus 1/baking temperature [6,10,11]. The RBS spectra in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…The thermal stability of Mo/Si multilayers has been studied earlier in several works [5][6][7][8][9][10][11] but in all of them the multilayers are fabricated by sputtering. In [12] it is shown that thermal treatment during e--beam deposition can considerably enhance the reflectivity of Mo/Si multilayer * Present address: European Synchrotron Radiation Facility, F-38043 Grenoble, France mirrors with a double layer spacing of about 7.5 nm.…”

Section: Pacsmentioning

confidence: 99%

Thermal stability of Mo/Si multilayer soft-X-ray mirrors fabricated by electron-beam evaporation

et al. 1994

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Abstract. Mo/Si multilayers are fabricated by electronbeam evaporation in UHV at different temperatures (30 ° C, 150 ° C, 200 ° C) during deposition. After completion their thermal stability is tested by baking them at temperatures (Tbak) between 200°C and 800°C in steps of 50°C or 100 ° C. After each baking step the multilayers are characterized by small angle CuK -X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500 ° C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150 ° C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200 ° C stands even a 20 min 500 ° C baking without considerable changes in the reflectivity behaviour. 68.55, 68.65, 78.65 In the wavelength range between 13 nm and 30 nm the combination of Mo and Si is most widely used for normalincidence multilayer mirrors. Reflectivities around 60% have been achieved with both sputtering [1] and e -beam evaporation in combination with thermal treatments during deposition [2,3]. Besides a high value for the reflectivity, the stability of the multilayer stack is also an important property, since applications include for example synchrotron radiation optics, where the multilayer can be heated to a few hundred degrees Celsius [4]. The long-term stability is also important for a number of applications. PACS:The thermal stability of Mo/Si multilayers has been studied earlier in several works [5][6][7][8][9][10][11] but in all of them the multilayers are fabricated by sputtering. In [12] it is shown that thermal treatment during e--beam deposition can considerably enhance the reflectivity of Mo/Si multilayer * Present address: European Synchrotron Radiation Facility, F-38043 Grenoble, France mirrors with a double layer spacing of about 7.5 nm. For a deposition temperature (Tdep) of 150°C the reflectivity is about a factor of two larger than the reflectivity of the 30 ° C and 200 ° C sample [12,13]. In other previous works [14,15] the influence of the deposition temperature on the microstructure of Mo/Si-multilayer systems fabricated by e--beam evaporation was studied. They have shown that Mo/Si muttilayers have interlayers of a mixture of Mo and Si at the Mo-Si interfaces and that the thickness of Mo-on-Si interlayers increases with increasing deposition temperature, while the thickness of the Si-on-Mo interlayers keeps constant. In our work the influence of the different microstructure for the multilayers which were deposited at different temperatures on the thermal stability is also investigated.

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“…Thermal evaporation sources yielded abrupt interfaces, independent of the order of deposition. Two TEM studies 17,18 of Mo-Si interfaces on sputtered samples both conclude that the interfaces are 17 Å thick when Mo is deposited on Si, and 10 Å thick when Si is deposited on Mo. The lower conductivity in the sputtered samples may therefore result from scattering from substitutional impurities ͑silicon in molybdenum͒ as well as perhaps a greater degree of configurational disorder.…”

Section: G(dt)/g(d290) Versus T Inmentioning

confidence: 99%