Electrically induced ionic motion
offers a new way to realize voltage-controlled
magnetism, opening the door to a new generation of logic, sensor,
and data storage technologies. Here, we demonstrate an effective approach
to magneto-ionically and electrically tune the exchange bias in Gd/Ni1–x
Co
x
O
thin films (x = 0.50 and 0.67), where neither of
the layers alone is ferromagnetic at room temperature. The Gd capping
layer deposited onto antiferromagnetic Ni1–x
Co
x
O initiates a solid-state redox
reaction that reduces an interfacial region of the oxide to ferromagnetic
NiCo. An exchange bias is established after field cooling (FC), which
can be enhanced by up to 35% after a voltage conditioning and subsequently
reset with a second FC. These effects are caused by the presence of
an interfacial ferromagnetic NiCo layer, which further alloys with
the Gd layer upon FC and voltage application, as confirmed by electron
microscopy and polarized neutron reflectometry studies. These results
highlight the viability of the solid-state magneto-ionic approach
to achieve electric control of exchange bias, with potential for energy-efficient
magneto-ionic devices.